Predictive Modeling

  • Francis F. Chen
  • Jane P. Chang


The ever-shrinking device dimensions with corresponding higher aspect ratios have made profile control in plasma etching processes a much more difficult task. These phenomena include variation of the etching rates in reactive ion etching (RIE lag), variation of etching profile shapes (bowing, faceting, trenching), variation in selectivity to the underlying film, and variation in film morphology. At the same time, etch rates need to be maximized while minimizing the device damage to make the etching processes economically viable. Therefore, the simulation and prediction of etching profile evolution becomes increasingly important to ensure the success of a deep-submicron etching process.


High Aspect Ratio Etch Rate Plasma Etching Direct Simulation Monte Carlo Profile Evolution 
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Copyright information

© Springer Science+Business Media New York 2003

Authors and Affiliations

  • Francis F. Chen
    • 1
  • Jane P. Chang
    • 2
  1. 1.Electrical Engineering DepartmentUniversity of CaliforniaLos AngelesUSA
  2. 2.Chemical Engineering DepartmentUniversity of CaliforniaLos AngelesUSA

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