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  • Francis F. Chen
  • Jane P. Chang

Abstract

It is generally observed that in a plasma etching process the etching rate drops as the etching area exposed to the plasma increases. This decrease in etching rate is true for processes that consume a major portion of the reactive species created in the plasma. Processes that are limited by the surface reaction kinetics do not exhibit this behavior. In processes where a loading effect is observed, the etching rate is typically proportional to the concentration of the reactant. For the case of etching m wafers with a plasma that produces single etching species, the loading effect is given as
$$ {{{R_o}} \over {{R_m}}} = 1 + m\phi = 1 + {{{A_w}{k_w}} \over {A{k_s}}} $$
(1)
where Ro is the etch rate in an empty reactor, Rm is the etch rate with m wafers present. Note that A and Aw are areas of the reactor surface and a wafer respectively, while kw and ks are the rate coefficients for reactant recombination at the reactors surfaces and of the reaction at the wafer respectively. Therefore ϕ is the slope of the loading curve as shown schematically in Fig. 26.

Keywords

Etch Rate Flux Ratio Load Effect Recombinant Surface Poly Silicon Gate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer Science+Business Media New York 2003

Authors and Affiliations

  • Francis F. Chen
    • 1
  • Jane P. Chang
    • 2
  1. 1.Electrical Engineering DepartmentUniversity of CaliforniaLos AngelesUSA
  2. 2.Chemical Engineering DepartmentUniversity of CaliforniaLos AngelesUSA

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