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Surface Reactions

  • Francis F. Chen
  • Jane P. Chang

Abstract

A number of gas-surface systems of interest to microelectronic fabrication react spontaneously, e.g., F with Si, and Cl2 with Al. Spontaneous etching is a process in which neutral species interact with a solid surface to form volatile products in the absence of energetic radiation (e.g., ion bombardment or UV radiation). These spontaneous chemical reactions generally are activated and follow an Arrhenius relationship, and the rate of reaction is given by
$$ E{R_s} = {k_o}{e^{\left( {{{{E_a}} \over {KT}}} \right)}}Q $$
(1)
where Q is the flux of reactive species, T is the substrate temperature, k o is the preexponential factor and E a is the activation energy. The preexponential factors and activation energies for both C1 and F atoms etching of silicon are shown in Table 1 for comparison.

Copyright information

© Springer Science+Business Media New York 2003

Authors and Affiliations

  • Francis F. Chen
    • 1
  • Jane P. Chang
    • 2
  1. 1.Electrical Engineering DepartmentUniversity of CaliforniaLos AngelesUSA
  2. 2.Chemical Engineering DepartmentUniversity of CaliforniaLos AngelesUSA

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