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Introduction

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Integration of Functional Oxides with Semiconductors

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Abstract

The ensuing development of crystalline epitaxial oxides on semiconductors (COS) has opened a new avenue for growing functional oxide nanostructures utilizing ferroelectricity, superconductivity, and magnetism, in monolithic integration with Si. This is a relatively new area with equal measure of exciting possibilities and difficult challenges. The key to successful oxide-semiconductor heteroepitaxy is to achieve two-dimensional (layer-by-layer) growth. In these systems, in addition to the lattice and thermal mismatch, one has to accommodate the transition between fundamentally different types of chemical bonding across the interface. This bonding mismatch can be accommodated by using intermetallic Zintl compounds, as transition layers, between ionic oxides and covalent semiconductors. In this chapter we briefly introduce the various classes of materials one has to deal with and their general properties. In particular, we discuss semiconductors, transition metal oxides, and Zintl intermetallics.

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Notes

  1. 1.

    Linear electro-optic effect, also known as the Pockels effect, produces birefringence in an optical medium induced by a constant or varying electric field. Unlike the quadratic Kerr effect, the Pockels effect is linear in the electric field and occurs only in crystals that lack inversion symmetry. The refractive index of an isotropic (to avoid cumbersome tensor notations) electro-optic medium can be expressed as:

    $$ n(E)=n-\frac{1}{2}r{n}^3E+O\left({E}^2\right) $$

    Where n = n(0) is the index in the absence of the field, and r n 3 represents the field derivative of the refractive index. The coefficient r is called the linear electro-optic or Pockels coefficient.

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Authors and Affiliations

  1. Department of Physics, The University of Texas at Austin, Austin, TX, USA

    Alexander A. Demkov & Agham B. Posadas

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Demkov, A.A., Posadas, A.B. (2014). Introduction. In: Integration of Functional Oxides with Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-9320-4_1

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