Field Effect Transistors

  • Christo Papadopoulos
Chapter
Part of the Undergraduate Lecture Notes in Physics book series (ULNP)

Abstract

The idea of using an electric field to modulate the conductivity of a semiconductor was first proposed and patented by Lilienfeld in 1925 (Fig. 4.1). This type of field effect phenomenon is used today in various types of field effect transistors (FETs). The first demonstration of a working FET device occurred in 1948 with practical devices appearing around 1953.

Keywords

SiO2 Dioxide Recombination Trench Hafnium 

References

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Christo Papadopoulos
    • 1
  1. 1.Electrical and Computer EngineeringUniversity of VictoriaVictoriaCanada

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