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Nanowire BioFETs: An Overview

  • M. Meyyappan
  • Jeong-Soo Lee
Chapter

Abstract

In this chapter, the biosensing as a key element of nanotechnology and commanding a wide range of applications is discussed, e.g., fast and efficient clinical diagnostics, health care, security, environmental monitoring, etc. The operation and sensing mechanism of BioFETs and ion-sensitive FETs are elaborated on a molecular level, based upon the molecular recognition between target and probe molecules and the input gate voltage and output ON current of the conventional FETs. In particular, the extended roles of the gate electrode of BioFETs as the probing surface are highlighted, in comparison with the conventional gate electrode, together with the physical and biological processes for detecting target molecules. Moreover, the bottom-up syntheses of vertical and horizontal nanowires are presented and the ensuing nanowires are characterized. Also, the top-down and bottom-up approaches for processing nanowires are compared by taking as criteria the process complexity and quality of the nanowires produced. Finally, the future prospects of bio-sensing are presented.

Keywords

Severe Acute Respiratory Syndrome Field Effect Transistor Silicon Nanowires Severe Acute Respiratory Syndrome Gate Electrode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Abbreviation

LED

Light-emitting diode

UV

Ultraviolet

IR

Infrared

NEP

Noise-equivalent power

SWCNT

Single-walled carbon nanotube

FET

Field effect transistor

CVD

Chemical vapor deposition

SAED

Selected-area-electron diffraction

VLS

Vapor-liquid-solid

PECVD

Plasma enhanced chemical vapor deposition

FIB

Focused ion beam

Notes

Acknowledgments

The work at Postech was supported by the World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Project: R31-2008-000-10100-0).

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.NASA Ames Research CenterMoffett FieldCaliforniaUSA
  2. 2.Department of Electrical EngineeringPohang University of Science and TechnologyPohangSouth Korea

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