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Nanowire Field Effect Transistors in Optoelectronics

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Nanowire Field Effect Transistors: Principles and Applications

Abstract

The nanowire FETs are discussed in this chapter as key components for optoelectronic circuits. The features of photonic devices are elaborated such as light absorption, generation of e–h pairs and the carrier transport, and the parameters dictating sensitivities, e.g., the wavelengths of light and the materials used are examined. Moreover, the 1-D nanostructures as a platform for photodetectors are highlighted, in conjunction with carbon nanotubes, nanobelts, nanoribbons, nanorods and nanowires. Also, the issues are addressed to regarding the process complexities, light absorption and adsorption, nanowire cross-section, quantum efficiency, threshold voltage shifts, the surface to volume ratio, carrier collection, etc. Moreover, the materials used for 1-D photodetector are examined, including compound semiconductors, Sulfides, Selenides, Tellurides, Metal Oxides, Zinc Oxide, Tin Oxide, Copper Oxide, Gallium Oxides and Indium Oxides, etc. These materials are characterized in terms of Schottky and Ohmic contacts, photoluminescence, photoconductivity, efficiency and speed of detection, etc.

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Abbreviations

FET:

Field effect transistor

CVD:

Chemical vapor deposition

VLS:

Vapor–liquid–solid

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Authors and Affiliations

  1. Nano Sensors and Systems Lab, Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang, South Korea

    Mehrdad Shaygan

  2. Moffett Field, NASA Ames Research Center, California, USA

    M. Meyyappan

  3. Department of Electronics and Electrical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea

    Jeong-Soo Lee

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  1. Mehrdad Shaygan
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  2. M. Meyyappan
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  3. Jeong-Soo Lee
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Correspondence to Mehrdad Shaygan .

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Editors and Affiliations

  1. Korea Institute for Advanced Study, Seoul, Korea, Republic of (South Korea)

    Dae Mann Kim

  2. Dept. of Creative IT Excellence Eng., POSTECH, Gyeongbuk, Korea, Republic of (South Korea)

    Yoon-Ha Jeong

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Shaygan, M., Meyyappan, M., Lee, JS. (2014). Nanowire Field Effect Transistors in Optoelectronics. In: Kim, D., Jeong, YH. (eds) Nanowire Field Effect Transistors: Principles and Applications. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8124-9_8

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