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Nanowire Field Effect Transistors: Principles and Applications pp 129–151Cite as

Characterization of Nanowire Devices Under Electrostatic Discharge Stress Conditions

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Abstract

Discussed in this chapter is the electrostatic discharge (ESD) as the pervasive threat from fabrication, packaging to assembly operation of IC. The ESD robustness of the gate-all-around Silicon nanowire FETs and poly-Si nanowire thin-film FETs is characterized and compared with other types of FETs including bulk/SOI FinFETs and MOSFETs. The ESD performance is specified in terms of the figures of merit such as the failure current, trigger voltage, on-state resistance, leakage current, and failure current density, etc. By using these figures of merits, the ESD performance of nanowire FETs is characterized as a function of gate length, channel shape and material, operation modes (bipolar or diode), process variation, and layout topologies. Moreover, the failure mechanism of nanowire FETs subject to ESD stresses is investigated by means of electrical characterization, optical microscopic observation, and failure analysis. Finally, the optimal nanowire structure and design window are proposed in the light of the ESD performance evaluations presented.

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Abbreviations

ESD:

Electrostatic discharge

IC:

Integrated circuits

SOI:

Silicon-on-insulator

HBM:

Human body model

TLP:

Transmission line pulsing

NWTFT:

Nanowire thin-film transistor

NW:

Nanowire

GAA NWFET:

Gate-all-around silicon nanowire field-effect transistor

FOM:

Figure of merit

SCS:

Semiconductor characterization system

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Authors and Affiliations

  1. School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, USA

    Wen Liu & Juin J. Liou

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  1. Wen Liu
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  2. Juin J. Liou
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Correspondence to Wen Liu .

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Editors and Affiliations

  1. Korea Institute for Advanced Study, Seoul, Korea, Republic of (South Korea)

    Dae Mann Kim

  2. Dept. of Creative IT Excellence Eng., POSTECH, Gyeongbuk, Korea, Republic of (South Korea)

    Yoon-Ha Jeong

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Liu, W., Liou, J.J. (2014). Characterization of Nanowire Devices Under Electrostatic Discharge Stress Conditions. In: Kim, D., Jeong, YH. (eds) Nanowire Field Effect Transistors: Principles and Applications. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8124-9_6

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  • DOI: https://doi.org/10.1007/978-1-4614-8124-9_6

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