Skip to main content
SpringerLink
Log in

Effect of Bismuth Alloying on the Transport Properties of the Dilute Bismide Alloy, GaAs1 − x Bi x

  • Chapter
  • First Online:
Bismuth-Containing Compounds

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 186))

Abstract

We studied the effect of Bi incorporation on the carrier mobilities and electron effective mass in the dilute Bismide alloy, GaAs1 − x Bi x , using electrical transport and photoluminescence techniques. We observed no significant degradation in the electron Hall mobility with Bi incorporation in GaAs, up to a concentration of 1.2 %. At higher Bi concentration (≥1.6 %) some degradation of the electron mobility was observed, although there is no apparent trend. Our measurements show that the hole Hall mobility decreases with increasing Bi concentration. Analysis of the temperature-dependent Hall transport data of p-type GaAs1 − x Bi x epilayers along with low-temperature PL measurements of p-doped and undoped epilayers suggests that Bi incorporation results in the formation of several trap levels above the valence band which we attribute to Bi–Bi pair states. The decrease in hole mobility with increasing Bi concentration can be explained as being caused by scattering at the isolated Bi and the Bi–Bi pair states. Magnetic field- and temperature-dependent resistivity measurements on n-type GaAs1 − x Bi x showed clear Shubnikov de Haas (SdH) oscillations up to a concentration of 0.88 %. The measured electron effective mass exhibits a gradual increase up to a concentration of 0.4 % Bi and then a gradual decrease. Accounting for the giant bandgap and spin-orbit bowing, the measured changes in the effective mass are in qualitative agreement with perturbation theory applied to these band changes, confirming that Bi mainly perturbs the valence band.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 129.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. Francoeur, S., Seong, M.-J., Mascarenhas, A., Tixier, S., Adamcyk, M., Tiedje, T.: Appl. Phys. Lett. 82, 3874 (2003)

    Article  CAS  Google Scholar 

  2. Fluegel, B., Francoeur, S., Mascarenhas, A., Tixier, S., Young, E.C., Tiedje, T.: Phys. Rev. Lett. 97, 067205 (2006)

    Article  CAS  Google Scholar 

  3. Levander et al.: Appl. Phys. Lett. 97, 141919 (2010)

    Google Scholar 

  4. Petropoulos, J.P., et al.: Appl. Phys. Lett. 99, 031110 (2011)

    Article  Google Scholar 

  5. Das, S.K., et al.: Infrared Phys. Technol. 55, 156 (2012)

    Article  CAS  Google Scholar 

  6. Yoshida, J., Kita, T., Wada, O., Oe, K.: Jpn. J. Appl. Phys. 42, 371 (2003)

    Article  CAS  Google Scholar 

  7. Dimroth, F.: Phys. Status Solidi C 3, 373 (2006)

    Article  CAS  Google Scholar 

  8. Asbeck, P.M., Welty, R.J., Tu, C.W., Xin, H.P., Welser, R.E.: Semicond. Sci. Techonol. 17, 898 (2002)

    Article  CAS  Google Scholar 

  9. Zhang, Y., Mascarenhas, A., Wang, L.W.: Phys. Rev. B 71, 155201 (2005)

    Article  Google Scholar 

  10. Mascarenhas, A., Kini, R.N., Zhang, Y., France, R., Ptak, A.J.: Phys. Status Solidi B 246, 504 (2008)

    Article  Google Scholar 

  11. Wolford, D.J., Bradley, J.A., Fry, K., Thompson, J., King, H.E.: In: Chadi, J.D., Harrison, W.A. (eds.) Proceedings of the 17th International Conference on the Physics of Semiconductors, p. 627. Springer, New York (1984)

    Google Scholar 

  12. Janotti, A., Wei, S.-H., Zhang, S.B.: Phys. Rev. B 65, 115203 (2002)

    Article  Google Scholar 

  13. Trumbore, F.A., Gershenzon, M., Thomas, D.G.: Appl. Phys. Lett. 9, 4 (1966)

    Article  CAS  Google Scholar 

  14. Wei, S.-H., Zunger, A.: Appl. Phys. Lett. 72, 2011 (1998)

    Article  CAS  Google Scholar 

  15. Endicott, J., Patanè, A., Ibáñez, J., Eaves, L., Bissiri, M., Hopkinson, M., Airey, R., Hill, G.: Phys. Rev. Lett. 91, 126802 (2003)

    Article  CAS  Google Scholar 

  16. Imhof, S., et al.: Appl. Phys. Lett. 98, 161104 (2011)

    Article  Google Scholar 

  17. Tixier, S., Adamcyk, M., Tiedje, T., Francoeur, S., Mascarenhas, A., Wei, P., Schiettekatte, F.: Appl. Phys. Lett. 82, 2245 (2003)

    Article  CAS  Google Scholar 

  18. France, R., Beaton, D.A., Alberi, K., Simon, J., Mascarenhas, A., Jiang, C.-S.: J. Cryst. Growth 338, 107 (2012)

    Article  Google Scholar 

  19. Young, D.L., Geisz, J.F., Coutts, T.J.: Appl. Phys. Lett. 82, 1236 (2003)

    Article  CAS  Google Scholar 

  20. Rhode, D.L.: In: Willardson, R.K., Beer, A.C. (eds.) Semiconductors and Semimetals, vol. 10. Academic, New York (1975)

    Google Scholar 

  21. Cooke, D.G., Hegmann, F.A., Young, E.C., Tiedje, T.: Appl. Phys. Lett. 89, 122103 (2006)

    Article  Google Scholar 

  22. Fahy, S., Lindsay, A., Ouerdane, H., O’Reilly, E.P.: Phys. Rev. B 74, 035203 (2006)

    Article  Google Scholar 

  23. Pettinari, G., Polimeni, A., Blokland, J.H., Trotta, R., Christianen, P.C.M., Capizzi, M., Maan, J.C., Lu, X., Young, E.C., Tiedje, T.: Phys. Rev. B 81, 235211 (2010)

    Article  Google Scholar 

  24. Kini, R.N., Bhusal, L., Ptak, A.J., France, R., Mascarenhas, A.: J. Appl. Phys. 106, 043705 (2009)

    Article  Google Scholar 

  25. Shaw, R.W., Hill, D.E.: Phys. Rev B 1, 658 (1970)

    Article  Google Scholar 

  26. Roth, L.M., Argyres, P.N.: In: Willardson, R.K., Beer, A.C. (eds.) Semiconductors and Semimetals, vol. 1, pp. 159–202. Academic, New York (1966)

    Google Scholar 

  27. Hermann, C., Weisbuch, C.: Phys. Rev. B 15, 823 (1977)

    Article  CAS  Google Scholar 

  28. Blakemore, J.S.: J. Appl. Phys. 53, R159 (1982)

    Article  Google Scholar 

  29. Adachi, S.: J. Appl. Phys. 58, R1 (1985)

    Article  CAS  Google Scholar 

  30. Alberi, K., Wu, J., Walukiewicz, W., Yu, K.M., Dubon, O.D., Watkins, S.P., Wang, C.X., Liu, X., Cho, Y.-J., Furdyna, J.: Phys. Rev. B 75, 045203 (2007)

    Article  Google Scholar 

  31. Shokhovets, S., Ambacher, O., Gobsch, G.: Phys. Rev. B 76, 125203 (2007)

    Article  Google Scholar 

  32. Berolo, O., Woolley, J.C., Van Vechten, J.A.: Phys. Rev. B 8, 3794 (1973)

    Article  CAS  Google Scholar 

  33. Beaton, D.A., Lewis, R.B., Masnadi-Shirazi, M., Tiedje, T.: J. Appl. Phys. 108, 083708 (2010)

    Article  Google Scholar 

  34. Xin, H.P., Tu, C.W., Geva, M.: J. Vac. Sci. Technol. B 18, 1476 (2000)

    Article  CAS  Google Scholar 

  35. Li, W., Pessa, M., Toivonen, J., Lipsanen, H.: Phys. Rev. B 64, 113308 (2001)

    Article  Google Scholar 

  36. Kunzer, M., Jost, W., Kaufmann, U., Hobgood, H.M., Thomas, R.N.: Phys. Rev. B 48, 4437 (1993)

    Article  CAS  Google Scholar 

  37. Ciatto, G., Alippi, P., Amore Bonapasta, A., Tiedje, T.: Appl. Phys. Lett. 99, 141912 (2011)

    Article  Google Scholar 

  38. Stockman, S.A., Höfler, G.E., Baillargeon, J.N., Hsieh, K.C., Cheng, K.Y., Stillman, G.E.: J. Appl. Phys. 72, 981 (1992)

    Article  CAS  Google Scholar 

  39. Neumann, H.: Cryst. Res. Technol. 23, 1377 (1988)

    Article  CAS  Google Scholar 

  40. Semiconductor Statistics, J.S.: Blakemore. Pergamon Press, New York (1960)

    Google Scholar 

  41. Francoeur, S., Tixier, S., Young, E., Tiedje, T., Mascarenhas, A.: Phys. Rev. B 77, 085209 (2008)

    Article  Google Scholar 

  42. Pettinari, G., Polimeni, A., Capizzi, M., Blokland, J.H., Christianen, P.C.M., Maan, J.C., Young, E.C., Tiedje, T.: Appl. Phys. Lett. 92, 262105 (2008)

    Article  Google Scholar 

  43. Kudrawiec, R., et al.: J. Appl. Phys. 106, 023518 (2009)

    Article  Google Scholar 

  44. Kreitman, M.M., Barnett, D.L.: J. Chem. Phys. 43, 364 (1965)

    Article  CAS  Google Scholar 

  45. Thomas, D.G., Hopfield, J.J., Frosch, C.J.: Phys. Rev. Lett. 15, 857 (1965)

    Article  Google Scholar 

  46. Thomas, D.G., Hopfield, J.J.: Phys. Rev. 150, 680 (1966)

    Article  CAS  Google Scholar 

  47. Wiesner, P.J., Street, R.A., Wolf, H.D.: Phys. Rev. Lett. 35, 1366 (1975)

    Article  CAS  Google Scholar 

  48. Mariette, H.: Phys. B 146B, 286 (1987)

    Google Scholar 

Download references

Acknowledgements

This work was supported by the DOE/SC/BES/DMS under contract no. DE-AC36-08GO28308 with the National Renewable Energy Laboratory.

Author information

Authors and Affiliations

  1. Indian Institute of Science Education and Research Thiruvananthapuram (IISER-TVM), CET Campus, Engineering College P.O., Thiruvananthapuram, Kerala, 695 016, India

    Rajeev N. Kini

  2. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO, 80401, USA

    Angelo Mascarenhas

Authors
  1. Rajeev N. Kini
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Angelo Mascarenhas
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Rajeev N. Kini .

Editor information

Editors and Affiliations

  1. State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

    Handong Li

  2. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

Rights and permissions

Reprints and permissions

Copyright information

© 2013 Springer Science+Business Media New York

About this chapter

Cite this chapter

Kini, R.N., Mascarenhas, A. (2013). Effect of Bismuth Alloying on the Transport Properties of the Dilute Bismide Alloy, GaAs1 − x Bi x . In: Li, H., Wang, Z. (eds) Bismuth-Containing Compounds. Springer Series in Materials Science, vol 186. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8121-8_8

Download citation

Publish with us

Policies and ethics

Search

Navigation