Theory of the Electronic Structure of Dilute Bismide Alloys: Tight-Binding and k · p Models

  • Christopher A. Broderick
  • Muhammad Usman
  • Eoin P. O’Reilly
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 186)

Abstract

Dilute bismide alloys have been the focus of increasing research effort in recent years, due in large part to their novel electronic properties. In particular, they display significant potential for achieving highly efficient photonic devices operating at telecomm wavelengths (1.3–1.5 μm). However, despite substantial progress in the growth and characterisation of dilute bismides, there have been comparatively few theoretical investigations of this novel material system. We summarise here aspects of our theoretical work on the electronic and optical properties of dilute bismide alloys. We present tight-binding and k · p models for the electronic structure of (In)GaBi x As1−x , in which the strong reduction of the band gap (E g ) and increase in the spin-orbit-splitting energy (Δ SO) are explained in terms of a band-anticrossing interaction between the extended states of the host matrix valence band edge and Bi-related resonant impurity states lying in the valence band. Our results, which are in good agreement with the available experimental data, serve to elucidate the origins of the novel electronic properties of dilute bismide alloys and confirm the crossover to an E g < Δ SO regime in GaBi x As1−x for x ≳ 11 %, a condition which should lead to suppressed Auger recombination in long wavelength devices. The dilute bismide kp model is applied to calculate the effect of Bi incorporation on the band structure and optical gain of dilute bismide quantum well structures, and some general trends relevant to laser operation are identified. We also extend our models to the quaternary dilute bismide–nitride alloy GaBi x N y As\( {}_{1-x-y} \)and show how co-alloying of Bi and N offers broad scope for band structure engineering which should lead to the realisation of highly efficient GaAs-based long wavelength photonic devices.

Keywords

Recombination GaAs Nitride Bismuth Auger 

Notes

Acknowledgements

 C.A. Broderick acknowledges financial support from the Irish Research Council under the Embark Initiative (RS/2010/2766). M. Usman and E.P. O’Reilly acknowledge financial support from the European Union Seventh Framework Programme (BIANCHO; FP7-257974) and Science Foundation Ireland (10/IN.1/I299). M. Usman acknowledges the use of computational resources from the National Science Foundation funded Network for Computational Nanotechnology through http://www.nanohub.org. The tight binding calculations were performed using the NanoElectronic MOdeling (NEMO 3-D) simulator [51, 52].

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Christopher A. Broderick
    • 1
    • 2
  • Muhammad Usman
    • 1
  • Eoin P. O’Reilly
    • 1
    • 2
  1. 1.Tyndall National Institute, Lee MaltingsCorkIreland
  2. 2.Department of PhysicsUniversity College CorkCorkIreland

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