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Bismuth-Containing Compounds pp 225–261Cite as

Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 186))

Abstract

In this chapter, it is first described how the surface science and engineering of the III–V compound semiconductors are relevant to developing the semiconductor-based materials, including bismuth (Bi) containing III–V films, for improved electronics and optoelectronics devices. After that the general properties of the III–V(100) surfaces, which usually undergo strong atomic rearrangements (reconstructions), are reviewed. Before focusing on the unusual Bi-induced III–V(100)(2 × 1) reconstructions and Bi-induced changes in the III–V(100)(2 3× 4) surfaces, it is described the experimental and computational research methods used as well as the advantages obtained by combining the experimental and computational results in the analysis. Calculational results reveal an interesting correlation between the geometry and surface band structure of the (2 × 1) reconstruction, and the relative stability of the (2 × 1) reconstruction.

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Acknowledgements

We would like to thank MSc. Marja Ahola-Tuomi, Dr. Mikhail Kuzmin, Dr. Janusz Sadowski, Dr. Martin Adell, Dr. Johan Adell, Dr. Janne Pakarinen, MSc. Jouko Lång, and MSc. Niko Räsänen for their contributions to the experiments. We also are grateful to the MAX-lab staff and Mr. H. Ollila for their assistance. Furthermore, we thank Prof. Levente Vitos, Prof. Kalevi Kokko, Prof. Juhani Väyrynen, Prof. Mircea Guina, Prof. Markus Pessa, and Prof. Changsi Peng for the valuable discussions.

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  1. Materials Research Laboratory, Department of Physics and Astronomy, University of Turku, Turku, 20014, Finland

    Pekka Laukkanen & Marko Punkkinen

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  1. Pekka Laukkanen
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  2. Marko Punkkinen
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Correspondence to Pekka Laukkanen .

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  1. State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

    Handong Li

  2. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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© 2013 Springer Science+Business Media New York

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Laukkanen, P., Punkkinen, M. (2013). Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors. In: Li, H., Wang, Z. (eds) Bismuth-Containing Compounds. Springer Series in Materials Science, vol 186. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8121-8_10

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