Charge Trapping in MOSFETS: BTI and RTN Modeling for Circuits

  • Gilson Wirth
  • Yu Cao
  • Jyothi B. Velamala
  • Ketul B. Sutaria
  • Takashi Sato


This chapter presents experimental investigation and statistical modeling of charge trapping in the context of random telegraph noise (RTN) and bias temperature instability (BTI). The goal is to develop circuit (electrical) level models to support circuit designers. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in the electrical behavior of MOSFETs. Besides evaluating the average behavior, the modeling approach here proposed allows the derivation of statistically relevant parameters. It allows the derivation of an analytical formulation for the both noise (RTN) and aging (BTI) behavior. Monte Carlo simulations are also discussed and presented. Good agreement between experimental data, Monte Carlo simulations, and model is found.


Fermi Level Noise Power Trap Density Charge Trapping Bias Point 
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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Gilson Wirth
    • 1
  • Yu Cao
    • 2
  • Jyothi B. Velamala
    • 2
  • Ketul B. Sutaria
    • 2
  • Takashi Sato
    • 3
  1. 1.UFRGS – Electrical Eng DepartmentPorto AlegreBrazil
  2. 2.Arizona State UniversityTempeUSA
  3. 3.Graduate School of InformaticsKyoto UniversityKyotoJapan

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