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Application of On-Chip Device Heating for BTI Investigations

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Book cover Bias Temperature Instability for Devices and Circuits

Abstract

This chapter introduces a new experimental approach allowing to switch the temperature of a device in a very fast and defined way. The new hardware tool, which we will herein refer to as polycrystalline silicon heater or simply poly-heater, allows overcoming previously strict experimental limitations regarding the speed of temperature variation and the accessibility of temperature range. Having broadened one’s mind to the possibility of switching the temperature very fast at arbitrary points in time, the poly-heater technique opens up unprecedented experimental capabilities for bias temperature instability (BTI) characterization. For instance, one can achieve decoupling of stress and characterization temperature by making use of degradation quenching. Such or similar experiments can probe our understanding of the BTI physics in a novel manner.

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References

  1. W. Muth, W. Walter, in Proc.ESSDERC (2007), pp. 1251–1262

    Google Scholar 

  2. C. Schluender, R.P. Vollertsen, W. Gustin, H. Reisinger, in Proc.ESSDERC (2007), pp. 131–134

    Google Scholar 

  3. T.K. Kang, C.S. Wang, K.C. Su, Jpn.J.Appl.Phys. 46, 7639 (2007)

    Google Scholar 

  4. C.S. Wang, W.C. Chang, W.S. Ke, C.T. Chiang, C.F. Lee, K.C. Su, in Proc.SSDM (2005), pp. 580–581

    Google Scholar 

  5. C.S. Wang, W.C. Chang, W.S. Ke, K.C. Su, in Proc.IIRW (2006), pp. 136–138

    Google Scholar 

  6. H. Köck, V. Košel, C. Djelassi, M. Glavanovics, D. Pogany, Microelectron.Reliab. 49, 1132 (2009)

    Article  Google Scholar 

  7. A. Kelleha, W. Lane, IEEE Trans.Nucl.Sci. 43, 997 (1996)

    Article  Google Scholar 

  8. W. Liu, M. Asheghi, J. Appl. Phys. 98, 123523 (2005)

    Article  Google Scholar 

  9. A. Cardoso, A.K. Srivastava, J. Vac. Sci. Tech. B 19, 397 (2001)

    Article  Google Scholar 

  10. H. Ibele, K. Reitinger, in IEEE Semiconductor Wafer Test Workshop (2005)

    Google Scholar 

  11. P. Leturcq, J.M. Dorkel, A. Napieralski, E. Lachiver, Trans. Elec. Dev. 34, 1147 (1987)

    Article  Google Scholar 

  12. C.J. Glassbrenner, G.A. Slack, Phys. Rev. 134, A1058 (1964)

    Article  Google Scholar 

  13. G.A. Slack, J. Appl. Phys. 35, 3460 (1964)

    Article  Google Scholar 

  14. T. Aichinger, M. Nelhiebel, T. Grasser, in Proc.ESREF (2008), pp. 1178–1184

    Google Scholar 

  15. T. Aichinger, M. Nelhiebel, T. Grasser, in Proc.IRPS (2009), pp. 2–7

    Google Scholar 

  16. H. Reisinger, O. Blank, W. Heinrigs, A. Mühlhoff, W. Gustin, C. Schlünder, in Proc.IRPS (2006), pp. 448–453

    Google Scholar 

  17. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, M. Goodwin, in Proc.IRPS (2005), pp. 381–387

    Google Scholar 

  18. G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser, in IEDM Tech. Dig. (2011), pp. 27.3.1–27.3.4

    Google Scholar 

  19. B. Tuttle, Phys.Rev.B 59, 12884 (1999)

    Google Scholar 

  20. S. Ganichev, E. Ziemann, W. Prettl, I. Yassievich, A. Istratov, E. Weber, Phys.Rev.B 61, 61 (2000)

    Google Scholar 

  21. W. Gös, M. Karner, S. Tyaginov, P. Hehenberger, T. Grasser, in Proc.SISPAD (2008), pp. 69–72

    Google Scholar 

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Acknowledgements

This work was jointly funded by the Austrian Research Promotion Agency (FFG, Project No. 831163) and the Carinthian Economic Promotion Fund (KWF, contract KWF-1521|22741|34186).

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Authors and Affiliations

  1. Infineon Technologies Austria AG, Siemensstraße 2, Villach, Austria

    Thomas Aichinger

  2. KAI Kompetenzzentrum für Automobil- und Industrielektronik, Europastraße 8, Villach, Austria

    Gregor Pobegen & Michael Nelhiebel

Authors
  1. Thomas Aichinger
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  2. Gregor Pobegen
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  3. Michael Nelhiebel
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Corresponding author

Correspondence to Thomas Aichinger .

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Editors and Affiliations

  1. Institute for Microelectronics, Technische Universität Wien, Wien, Austria

    Tibor Grasser

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Aichinger, T., Pobegen, G., Nelhiebel, M. (2014). Application of On-Chip Device Heating for BTI Investigations. In: Grasser, T. (eds) Bias Temperature Instability for Devices and Circuits. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-7909-3_2

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  • DOI: https://doi.org/10.1007/978-1-4614-7909-3_2

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  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4614-7908-6

  • Online ISBN: 978-1-4614-7909-3

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