Improvement of Radiation-Induced Degradation in MOSFET by Using Glass Fiber/Epoxy/Silica Nanoparticles/γ-APTES Composite as Shielding Materials for High-Energy Radiation
Our recent study showed that the trapping charges of the polysilicon wire sensor caused by γ-ray radiation primarily concentrated in the γ-APTES/silica nanoparticles composite layer covered on the sensor. In this chapter, we investigate the shielding effect of the glass fiber/epoxy/silica nanoparticles/γ-APTES composite materials for high-energy radiation in commercially available MOSFET. The use of glass fiber/epoxy/silica nanoparticles/γ-APTES composite plate shielding during irradiation improved the post-irradiated degradation of transfer characteristics by three orders of magnitude for the pMOSFET and half an order of magnitude for the nMOSFET, respectively, as compared to the pMOSFET and nMOSFET with the glass fiber/epoxy or glass fiber/epoxy/silica nanoparticles or without shielding.
Keywordsγ-APTES Nanoparticles Radiation Shielding
This work was financially supported by the National Science Council of Taiwan, ROC under contract no. NSC 100-2221-E-260-004-MY3.