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Wire Bond Pads

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Abstract

This chapter examines the pad materials and finishes for wire bonding. Cu wire bonding on Al and Cu pads is discussed. The common pad finishes, including NiAu, NiPdAu, PdAu, electroless nickel immersion gold, electroless nickel/electroless palladium/immersion gold, and electroplated silver, are considered. The effect of the thickness of surface finish layers on bond strength is also explained. The chapter also discusses the effects of surface treatment on the reliability of wire bonds. The sources of contamination on bond pads, including fluorine, chlorine, carbon, oxygen, silicon, and titanium, are examined, along with their influence on wire bond reliability. The effect of lead surface contamination and pad surface roughness on wire bond strength is considered. The surface treatments, including organic coating to prevent pad oxidation and plasma cleaning to remove surface contaminants, are also explained.

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References

  1. C. T. h. Lu, “The challenges of copper wire bonding,” in Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International, 2010, pp. 1–4.

    Google Scholar 

  2. H. Clauberg, P. Backus, and B. Chylak, “Nickel-palladium bond pads for copper wire bonding,” Microelectronics Reliability, vol. 51, pp. 75–80, Jan 2011.

    Article  Google Scholar 

  3. A. Shah, M. Mayer, Y. Zhou, S. J. Hong, and J. T. Moon, “Reduction of underpad stress in thermosonic copper ball bonding,” in Electronic Components and Technology Conference, 2008. ECTC 2008. 58th, 2008, pp. 2123-2130.

    Google Scholar 

  4. L. England and T. Jiang, “Reliability of Cu wire bonding to Al metallization,” in Electronic Components and Technology Conference, 2007. ECTC '07. Proceedings. 57th, 2007, pp. 1604–1613.

    Google Scholar 

  5. S. L. Khoury, D. J. Burkhard, D. P. Galloway, and T. A. Scharr, “A comparison of copper and gold wire bonding on integrated circuit devices,” in Electronic Components and Technology Conference, 1990. 40th, 1990, pp. 768–776 vol.1.

    Google Scholar 

  6. N. Srikanth, J. Premkumar, M. Sivakumar, Y. M. Wong, and C. J. Vath, “Effect of wire purity on copper wire bonding,” in Electronics Packaging Technology Conference, 2007. EPTC 2007. 9th, 2007, pp. 755–759.

    Google Scholar 

  7. K. Soffa, in Presentation, ed, 2012.

    Google Scholar 

  8. T. Tu Anh, L. Chu-Chung, V. Mathew, and L. Higgins, “Copper wire bonding on low-k/copper wafers with bond over active (BOA) structures for automotive customers,” in Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st, 2011, pp. 1508–1515.

    Google Scholar 

  9. D. Stephan, F. W. Wulff, and E. Milke, “Reliability of palladium coated copper wire,” in Electronics Packaging Technology Conference (EPTC), 2010 12th, 2010, pp. 343–348.

    Google Scholar 

  10. J. Foley, H. Clauberg, and B. Chylak, “Enabling high volume fine pitch copper wire bonding: enhancements to process and equipment capability,” in Electronic System-Integration Technology Conference (ESTC), 2010 3rd, 2010, pp. 1–4.

    Google Scholar 

  11. P. Liu, L. Tong, J. Wang, L. Shi, and H. Tang, “Challenges and developments of copper wire bonding technology,” Microelectronics Reliability, vol. 52, pp. 1092–1098, 2012.

    Article  Google Scholar 

  12. A. Shah, A. Rezvani, M. Mayer, Y. Zhou, J. Persic, and J. T. Moon, “Reduction of ultrasonic pad stress and aluminum splash in copper ball bonding,” Microelectronics Reliability, vol. 51, pp. 67–74, Jan 2011.

    Article  Google Scholar 

  13. H. Clauberg, P. Backus, and B. Chylak, “Nickel–palladium bond pads for copper wire bonding,” Microelectronics Reliability, vol. 51, pp. 75–80, 2011.

    Article  Google Scholar 

  14. H. Clauberg, B. Chylak, N. Wong, J. Yeung, and E. Milke, “Wire bonding with Pd-coated copper wire,” in CPMT Symposium Japan, 2010 IEEE, 2010, pp. 1–4.

    Google Scholar 

  15. H. M. Ho, W. Lam, S. Stoukatch, P. Ratchev, C. J. Vath III, and E. Beyne, “Direct gold and copper wires bonding on copper,” Microelectronics Reliability, vol. 43, pp. 913–923, 2003.

    Article  Google Scholar 

  16. C. C. Lim, Y. C. Soh, C. C. Lee, and O. S. Lim, “Challenges of 43 um Cu bonding on very thin & softest Al bond pad structure,” in Electronics Packaging Technology Conference (EPTC), 2010 12th, 2010, pp. 37–43.

    Google Scholar 

  17. M. Sivakumar, V. Kripesh, L. Loon Aik, and M. Kumar, “Fine pitch copper wire bond process development for dual damascene Cu metallized chips,” in Electronics Packaging Technology Conference, 2002. 4th, 2002, pp. 350–355.

    Google Scholar 

  18. C. W. Leong, N. B. Jaafar, M. Chew, S. Sivakumar, G. Gunasekaran, K. Kanchet, D. Witarsa, J. B. Tan, V. R. Srinivasa, T. C. Chai, A. Alastair, and J. Woo, “Fine pitch copper wire bonding on 45 nm tech Cu/low-k chip with different bond pad metallurgy,” in Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th, 2011, pp. 752–757.

    Google Scholar 

  19. H.-J. Kim, J. Y. Lee, K.-W. Paik, K.-W. Koh, J. Won, S. Choe, J. Lee, J.-T. Moon, and Y.-J. Park, “Effects of Cu/Al intermetallic compound (IMC) on copper wire and aluminum pad bondability,” Components and Packaging Technologies, IEEE Transactions on, vol. 26, pp. 367–374, 2003.

    Google Scholar 

  20. J. Premkumar, B. S. Kumar, M. Madhu, M. Sivakumar, K. Y. J. Song, and Y. M. Wong, “Key factors in Cu wire bonding reliability: remnant aluminum and Cu/Al IMC thickness,” in Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th, 2008, pp. 971–975.

    Google Scholar 

  21. D. Degryse, B. Vandevelde, and E. Beyne, “FEM study of deformation and stresses in copper wire bonds on Cu low-k structures during processing,” in Electronic Components and Technology Conference, 2004. Proceedings. 54th, 2004, pp. 906–912 Vol.1.

    Google Scholar 

  22. Y. S. Zheng, Y. J. Su, B. Yu, and P. D. Foo, “Investigation of defect on copper bond pad surface in copper/low k process integration,” Microelectronics Reliability, vol. 43, pp. 1311–1316, 2003.

    Article  Google Scholar 

  23. M. Sivakumar, V. Kripesh, C. Ser Choong, C. Tai Chong, and L. Aik Lim, “Reliability of wire bonding on low-k dielectric material in damascene copper integrated circuits PBGA assembly,” Microelectronics Reliability, vol. 42, pp. 1535–1540, 2002.

    Article  Google Scholar 

  24. X. Fan, K. Qian, T. Wang, Y. Cong, M. Zhao, B. Zhang, and J. Wang, “Nanoindentation investigation of copper bonding wire and ball,” in Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on, 2009, pp. 790–794.

    Google Scholar 

  25. S. Murali, N. Srikanth, and C. J. Vath III, “An analysis of intermetallics formation of gold and copper ball bonding on thermal aging,” Materials Research Bulletin, vol. 38, pp. 637–646, 2003.

    Article  Google Scholar 

  26. P. Ratchev, S. Stoukatch, and B. Swinnen, “Mechanical reliability of Au and Cu wire bonds to Al, Ni/Au and Ni/Pd/Au capped Cu bond pads,” Microelectronics Reliability, vol. 46, pp. 1315–1325, 2006.

    Article  Google Scholar 

  27. S. Lee, T. Uehling, and H. L. III., “Freescale copper wire - analysis, results and implementation,” 2012.

    Google Scholar 

  28. A. Shah, M. Mayer, Y. N. Zhou, S. J. Hong, and J. T. Moon, “Low-stress thermosonic copper ball bonding,” Electronics Packaging Manufacturing, IEEE Transactions on, vol. 32, pp. 176–184, 2009.

    Google Scholar 

  29. M. C. Han, B. Y. Yan, H. Y. Zhang, J. Z. Yao, and J. Li, “Low K CMOS65 ball grid array 40 μm pitch wire bonding process development,” in Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th, 2008, pp. 457–462.

    Google Scholar 

  30. D. Degryse, B. Vandevelde, and E. Beyne, “Mechanical FEM simulation of bonding process on Cu low-k wafers,” Components and Packaging Technologies, IEEE Transactions on, vol. 27, pp. 643–650, 2004.

    Google Scholar 

  31. C. C. Lee, T. A. Tran, and Y. K. Au, “Metal lift failure modes during fine pitch wire bonding low-k devices with bond over active (BOA) design,” in Electronics Packaging Technology Conference (EPTC), 2010 12th, 2010, pp. 31–36.

    Google Scholar 

  32. C.-F. Yu, C.-M. Chan, L.-C. Chan, and K.-C. Hsieh, “Cu wire bond microstructure analysis and failure mechanism,” Microelectronics Reliability, vol. 51, pp. 119–124, 2011.

    Article  Google Scholar 

  33. X. Zhang, X. Lin, and Y. Chen, “The reliability evaluation of Cu wire bonding by using focus ion beam system,” in Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on, 2010, pp. 1049–1052.

    Google Scholar 

  34. C. K. J. Teo, “17.5um thin Cu wire bonding for fragile low-k wafer technology,” in Electronics Packaging Technology Conference (EPTC), 2010 12th, 2010, pp. 355–358.

    Google Scholar 

  35. L. C. Chian, N. K. Chai, L. C. Chia, C. M. King, L. O. Seng, and C. K. Yau, “Copper wire reliability and bonding integrity robustness on cratering sensitive bond pad structure,” in Electronics Manufacturing and Technology, 31st International Conference on, 2006, pp. 354–364.

    Google Scholar 

  36. B. Chylak, J. Ling, H. Clauberg, and T. Thieme, “Next generation nickel-based bond pads enable copper wire bonding,” ECS Transactions, vol. 18, pp. 775–785, 2009.

    Google Scholar 

  37. A. Shah, M. Mayer, Y. Zhou, J. Persic, and J. T. Moon, “Optimization of ultrasound and bond force to reduce pad stress in thermosonic Cu ball bonding,” in Electronics Packaging Technology Conference, 2009. EPTC '09. 11th, 2009, pp. 10–15.

    Google Scholar 

  38. L. England, S. T. Eng, C. Liew, and H. H. Lim, “Cu wire bond parameter optimization on various bond pad metallization and barrier layer material schemes,” Microelectronics Reliability, vol. 51, pp. 81–87, 2011.

    Article  Google Scholar 

  39. Q. Chen, Z. Zhao, H. Liu, J. Chae, S. Kim, and M. Chung, “Investigation of various pad structure influence for copper wire bondability,“ in Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on, 2011, pp. 419–422.

    Google Scholar 

  40. G. G. Harman and C. E. Johnson, “Wire bonding to advanced copper, low-k integrated circuits, the metal/dielectric stacks, and materials considerations, “Components and Packaging Technologies, IEEE Transactions on, vol. 25, pp. 677–683, 2002.

    Google Scholar 

  41. G. V. Periasamy, V. Kripesh, C.-H. Tung, and L. Loon Aik, “Wire bonding on a novel immersion gold capped copper metallized integrated circuit,“ in Electronic Components and Technology Conference, 2004. Proceedings. 54th, 2004, pp. 358–364 Vol.1.

    Google Scholar 

  42. H. C. Hsu, H.-S. Chang, S.-C. Tsao, and S. L. Fu, “Advanced finite element model on copper wire ball bonding,“ in Electronic Manufacturing Technology Symposium (IEMT), 2010 34th IEEE/CPMT International, 2010, pp. 1–6.

    Google Scholar 

  43. M. Sekihara and T. Okita, “Ultrasonic wire bonding method for a semiconductor device,” 2012.

    Google Scholar 

  44. T. A. Tran, L. Yong, B. Williams, S. Chen, and A. Chen, “Fine pitch probing and wirebonding and reliability of aluminum capped copper bond pads,” in Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th, 2000, pp. 1674–1680.

    Google Scholar 

  45. M. Ozkok, Robert, H. and Clauberg, H. “Copper wire bonding on pure palladium surface finishes - eliminating the gold cost from the electronic packaging”, in Journal of Surface Mount Technology, vol. 24, no.2.

    Google Scholar 

  46. K. Johal, H. Robert, K. Desa, Q.H. Low and R. Huemoeller, “Performance and reliability evaluation of alternative surface finishes for wire bond and flip chip BGA applications.” Pan Pacific Symposium Conference Proceedings, 2006.

    Google Scholar 

  47. R. W. Johnson, M. J. Palmer, M. J. Bozack, and T. Isaacs-Smith, “Thermosonic gold wire bonding to laminate substrates with palladium surface finishes,” Electronics Packaging Manufacturing, IEEE Transactions on, vol. 22, pp. 7–15, 1999.

    Google Scholar 

  48. W. H. Li, A. Acuesta, M. G. Mercado, N. T. Malonzo, and R. S. Cabral, “Cu wire bonding in Ni/Pd/Au-Ag and roughened Ni/Pd/Au-Ag pre-plated leadframe packages,” in Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th, 2011, pp. 794–797.

    Google Scholar 

  49. M. Özkök, M. Gensicke, G. Heinz, H. Roberts, and J. McGurran, “Resistance of common PWB Surface Finishes against Corrosion in Harsh Environments,” in SMTA International Conference, p. 9, 2010.

    Google Scholar 

  50. E. P. Leng, P. Z. Song, A. Y. Kheng, C. C. Yong, T. T. Anh, J. Arthur, H. Downey, V. Mathew, and C. Y. Yin, “High temperature automotive application: a study on fine pitch Au and Cu WB integrity vs. Ni thickness of Ni/Pd/Au bond pad on C90 low k wafer technology,” in Electronics Packaging Technology Conference (EPTC), 2010 12th, 2010, pp. 349–354.

    Google Scholar 

  51. G. Khatibi, S. Puchner, B. Weiss, A. Zechmann, T. Detzel, and H. Hutter, “Influence of titanium surface contamination on the reliability of Al wire bonds,” in Microelectronics and Packaging Conference (EMPC), 2011 18th European, 2011, pp. 1–7.

    Google Scholar 

  52. P. Yu, J. Su, G. Qiang, L. Ming, and N. Chorng, “Study of aluminum pad contamination sources during wafer fabrication, shipping, storage and assembly,” in High Density packaging and Microsystem Integration, 2007. HDP '07. International Symposium on, 2007, pp. 1–3.

    Google Scholar 

  53. S. Alberici, D. Coulon, P. Joubin, Y. Mignot, L. Oggioni, P. Petruzza, D. Piumi, and L. Zanotti, “Surface treatment of wire bonding metal pads,” Microelectronic Engineering, vol. 70, pp. 558–565, 2003.

    Article  Google Scholar 

  54. K. H. Ernst, D. Grman, R. Hauert, and E. Holländer, “Fluorine-induced corrosion of aluminium microchip bond pads: an XPS and AES analysis,” Surface and Interface Analysis, vol. 21, pp. 691-696, 1994.

    Article  Google Scholar 

  55. M. Petzold, L. Berthold, D. Katzer, H. Knoll, D. Memhard, P. Meier, and K. D. Lang, “Surface oxide films on aluminum bondpads: influence on thermosonic wire bonding behavior and hardness,” Microelectronics Reliability, vol. 40, pp. 1515–1520, 2000.

    Article  Google Scholar 

  56. S. Puchner, Zechmann, A., Detzel, T., Hutter, H. “Titanium layers on aluminum bond pads: characterization of thin layers on rough substrates,” Surface and Interface Analysis, vol. 42, p. 4, 2010.

    Google Scholar 

  57. T. Y. Lin, W. S. Leong, K. H. Chua, R. Oh, Y. Miao, J. S. Pan, and J. W. Chai, “The impact of copper contamination on the quality of the second wire bonding process using X-ray photoelectron spectroscopy method,” Microelectronics Reliability, vol. 42, pp. 375–380, 2002.

    Article  Google Scholar 

  58. Y. Huang, Kim, H. J., McCracken, M., Viswanathan, G., Pon, F., Mayer, M., Zhou, Y.N., “Effect of Pd surface roughness on the bonding process and high temperature reliability of Au ball bonds,” Journal of Electronic Materials, vol. 40, p. 8, 2011.

    Google Scholar 

  59. D. T. Rooney, D. Nager, D. Geiger, and D. Shanguan, “Evaluation of wire bonding performance, process conditions, and metallurgical integrity of chip on board wire bonds,” Microelectronics Reliability, vol. 45, pp. 379–390, 2005.

    Article  Google Scholar 

  60. J. Li, Z. Zhao, and L. Jaisung, “Wire bonding performance and solder joint reliability investigation on ENEPIG finish substrate,” in Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on, 2010, pp. 240–245.

    Google Scholar 

  61. K. W. Lam, H.-M. Ho, S. Stoukatch, M. Van De Peer, P. Ratchev, C. J. Vath, A. Schervan, and E. Beyne, “Fine pitch copper wire bonding on copper bond pad process optimization,” in Electronic Materials and Packaging, 2002. Proceedings of the 4th International Symposium on, 2002, pp. 63–68.

    Google Scholar 

  62. P. Banda, H.-M. Ho, C. Whelan, W. Lam, C. J. Vath, and E. Beyne, “Direct Au and Cu wire bonding on Cu/low-k BEOL,” in Electronics Packaging Technology Conference, 2002. 4th, 2002, pp. 344–349.

    Google Scholar 

  63. J. D. Getty, “How plasma-enhanced surface modification improves the production of microelectronics and optoelectronics,” Chip scale review, p. 4, 2002.

    Google Scholar 

  64. Y. H. Chan, J. K. Kim, D. Liu, P. C. K. Liu, Y. M. Cheung, and M. W. Ng, “Effect of plasma treatment of Au-Ni-Cu bond pads on process windows of Au wire bonding,” Advanced Packaging, IEEE Transactions on, vol. 28, pp. 674–684, 2005.

    Google Scholar 

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Chauhan, P.S., Choubey, A., Zhong, Z., Pecht, M.G. (2014). Wire Bond Pads. In: Copper Wire Bonding. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-5761-9_7

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  • DOI: https://doi.org/10.1007/978-1-4614-5761-9_7

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