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Refine Models for PUF Simulation Requirements

  • Christoph Böhm
  • Maximilian Hofer
Chapter

Abstract

As for other analog circuits, the designer has to rely on the available transistor models during PUF design. This is especially important if the error correction implementation is also done at the same time. In this case, the error rate has to be estimated using Monte Carlo simulation. Unfortunately, the simulation often does not provide reliable results when it comes to temperature-dependent error rates. In this chapter, this problem is described in detail and a way to refine the Monte Carlo mismatch models is suggested.

Keywords

Doping Concentration Threshold Voltage Temperature Coefficient Temperature Behavior Channel Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. .
    BSIM4.6.4 MOSFET Model – Users Manual (2009) Department of electrical engineering and computer sciences, University of California, Berkeley, URL http://www-device.eecs.berkeley.edu/~bsim/
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    Cheek JD (2002) Angled halo implant tailoring using implant maskGoogle Scholar
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    Tsividis Y, McAndrew C (2011) Operation and modeling of the MOS transistor, 3rd edn. Oxford University Press, OxfordGoogle Scholar
  4. .
    Zeghbroeck (2011) Principles of semiconductor devices. URL http://ecee.colorado.edu/~bart/book/ (visited Sep 23, 2012)

Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Christoph Böhm
    • 1
  • Maximilian Hofer
    • 1
  1. 1.Institute of ElectronicsGraz University of TechnologyGrazAustria

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