A Planar SJ IGBT with Plugged p+ Collector

  • Jiazhen Wu
  • Frank Jiang
  • Zhigui Li
  • Xinnan Lin
  • Jin He
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 238)

Abstract

In order to improve the performance of the superjunction (SJ) Insulated Gate Bipolar Transistor (IGBT), the plugged p+ collector is implemented. By replacing the p+ collector with an optimized combination of p and p+ collectors, it offers better blocking voltage and switching speed simultaneously. Simulation results show that the blocking voltage increases from 204 to 329 V by 61.27 % and the switching-off time reduces from 0.335 to 0.170 μs by 49.3 %. The proposed structure shows lower loss, higher breakdown voltage, and higher switching speed compared with conventional SJ IGBT. The optimized switching-off loss (E off) and V cesat trade-off makes the proposed structure suitable for high-speed and high-power applications.

Notes

Acknowledgment

This work is supported by the Guangdong Science & Technology project (2010B090400443), the Shenzhen Science & Technology Foundation (JC201005270276A) (ZD201006110039A), and the Longgang Science & technology developing Foundation.

References

  1. 1.
    Takahashi Y, Yoshikawa K, Koga T, Soutome M, Seki Y (1995) Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs. Proc ISPSD 70–74Google Scholar
  2. 2.
    Khanna VK, Kumar A, Sood SC (2001) Investigation of degeneracy of current–voltage characteristics of asymmetrical IGBT with n-buffer layer concentration. Solid State Electron 45:1859–1865CrossRefGoogle Scholar
  3. 3.
    Laska T, Miller G, Pfaffenlehner M, Türkes P, Berger D, Gutsmann B, Kanschat P, Münzer M (2003) Short circuit properties of trench-/fieldstop-IGBTs—design aspects for a superior robustness. Proc ISPSD 152–155Google Scholar
  4. 4.
    Saggio M, Fagone D, Musumeci S (2000) Innovative technology for high voltage powerMOSFETs. Proc ISPSD 65–68Google Scholar
  5. 5.
    Shenoy P, Bhalla A, Dolny G (1999) Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET. Proc ISPSD 99–102Google Scholar
  6. 6.
    Antoniou M, Udrea F, Bauer F (2007) Optimisation of SuperJunction Bipolar Transistor for ultra-fast switching applications, Power Semiconductor Devices and IC’s, 2007. ISPSD ‘07. In: Nineteenth International Symposium on, 27–31 May 2007. pp 101–104Google Scholar
  7. 7.
    Antoniou M, Udrea F, Bauer F (2010) Dept. of Electr. Eng., Univ. of Cambridge, Cambridge, UK. In: The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling, Electron Devices, IEEE Transactions on, March 2010. pp 594–600Google Scholar
  8. 8.
    Wang Yongwei, Chen Xingbi (2011) A novel super-junction IGBT and its unique conducting mechanism. Res Prog SSEGoogle Scholar
  9. 9.
    Kwang-Hoon Oh et al (2006) A simulation study on Novel Field Stop IGBTs using superjunction. IEEE Trans Electron Dev 53(4):884–890Google Scholar
  10. 10.
    Kwang-Hoon Oh, Jaegil Lee, Kyu-Hyun Lee, Young Chul Kim, Chongman Yun (2006) A simulation study on novel field stop IGBTs using superjunction. IEEE Trans Electron Dev 53(4):884–890Google Scholar
  11. 11.
    Antoniou M, Udrea F (2006) Simulated superior performance of superjuction bipolar transistors. Int Semiconduct Conf 2:293–296Google Scholar
  12. 12.
    Antoniou M, Udrea F, Bauer F (2007) Optimisation of super junction bipolar transistor for ultra-fast switching applications, Power Semiconductor Devices and IC’s, 2007. ISPSD ‘07. In: Nineteenth International Symposium. pp 101–104Google Scholar
  13. 13.
    Fei Zhang, Lina Shi, Chengfang Li, Wei Wang, Wen Yu, Xiaowei Sun (2006) Novel plugged p+ collector structure for high-performance IGBT. IEEE Trans Plasma Sci 34(3):1026–1032Google Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Jiazhen Wu
    • 1
  • Frank Jiang
    • 1
  • Zhigui Li
    • 1
  • Xinnan Lin
    • 1
  • Jin He
    • 2
  1. 1.The Key Laboratory of Integrated MicrosystemsPeking University Shenzhen Graduate SchoolShenzhenChina
  2. 2.Peking University Shenzhen SOC Key Laboratory PKU HKUST Shenzhen InstituteShenzhenChina

Personalised recommendations