Reliability Study of InP-Based HBTs Operating at High Current Density
The high-speed and low-power operation of InP-based heterojunction bipolar transistors (HBTs) makes them very attractive for use in optical-communication ICs operating at 40 Gbit/s and more. An important requirement for InP HBTs is long-term stability in their electrical characteristics under high-current-density operation. This chapter describes the degradation behavior for devices operating at current densities of up to 10 mA/μm2 under elevated ambient temperatures. The results of electrical measurements and microscopic analyses indicate that surface passivation in the external base, a refractory electrode on the emitter, and high crystal quality at the emitter–base junction are the keys to enhancing device reliability.
KeywordsContact Layer Atomic Composition Current Gain Junction Temperature Accelerate Life Test
The authors thank Minoru Ida and Norihide Kashio for fabrication of HBTs and for discussions. They also thank Takatomo Enoki, Shoji Yamahata, Masami Tokumitsu, and Tomoyuki Akeyoshi for their encouragement throughout this work. Thanks are also due to Mayumi Mitsuhashi for her assistance.
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