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Strain Effects in AlGaN/GaN HEMTs

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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Abstract

Since stress is a major factor in the operation, performance, and reliability in AlGaN/GaN HEMT devices, a thorough understanding of the impact of stress on performance and reliability can lead to improvements in device design. Mechanical wafer bending is a cost-effective method to investigate the effects of stress on semiconductor devices which has been extensively used to isolate and study the effect of stress in strain-engineered Si MOSFETs. In this chapter, a systematic study of the effects of externally applied mechanical stress on the AlGaN/GaN HEMT channel resistance and gate current is presented to provide insights into the physical mechanisms responsible for stress-related performance and reliability issues.

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Authors and Affiliations

  1. Interdisciplinary Microsystems Group, Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611-6200, USA

    Min Chu, Andrew D. Koehler, Amit Gupta, Srivatsan Parthasarathy, Mehmet Onur Baykan, Scott E. Thompson & Toshikazu Nishida

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  1. Graduate School of Engineering, Kanazawa Institute of Technology, Tokyo, Japan

    Osamu Ueda

  2. Materials Science and Engineering, University of Florida, Gainesville, Florida, USA

    Stephen J. Pearton

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Chu, M. et al. (2013). Strain Effects in AlGaN/GaN HEMTs. In: Ueda, O., Pearton, S. (eds) Materials and Reliability Handbook for Semiconductor Optical and Electron Devices. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-4337-7_12

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