Recent Trends in Bias Temperature Instability

  • B. Kaczer
  • T. Grasser
  • J. Franco
  • M. Toledano-Luque
  • J. Roussel
  • M. Cho
  • E. Simoen
  • G. Groeseneken
Chapter

Abstract

The paradigm shifts occurring in the past few years in our understanding of BTI are reviewed. Among the most significant ones is the shift from perceiving NBTI in terms of the ReactionDiffusion model to analyzing BTI with the tools originally developed for describing lowfrequency noise. This includes the interpretation of the time, temperature, voltage, and duty cycle dependences of BTI. It is further demonstrated that a wealth of information about defect properties can be obtained from deeplyscaled devices, and that this information can allow projection of variability issues of future deeply downscaled CMOS devices. The chapter is concluded by showing the most promising technological solutions to alleviate both PBTI and NBTI.

Keywords

SiO2 Convolution Lanthanum 

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • B. Kaczer
    • 1
  • T. Grasser
    • 2
  • J. Franco
    • 1
  • M. Toledano-Luque
    • 1
  • J. Roussel
    • 1
  • M. Cho
    • 1
  • E. Simoen
    • 1
  • G. Groeseneken
    • 1
    • 3
  1. 1.imecLeuvenBelgium
  2. 2.TU WienWienAustria
  3. 3.KULeuvenBelgium

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