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Effect of Temperature on Si-Ge Hetero-Gate Raised Buried Oxide Drain Tunnel FET Electrical Parameters

  • Monalisa das
  • Brinda Bhowmick
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 150)

Abstract

The effect of temperature on SiGe hetero-gate raised buried oxide drain Tunnel FET electrical parameters like tunnelling bandgap, threshold voltage, subthreshold swing, etc. are discussed in this paper. A modified SOI based Silicon hetero-gate TFET structure has been used. The proposed device is almost free from short channel effects. The simulation is performed using Synopsys 2D TCAD tools where non local band-to-band tunnelling is applied.

Keywords

Non local band-to-band tunnelling Hetero-gate Raised buried oxide Tunnel FET SiGe 

Notes

Acknowledgments

This work was supported by ALL INDIA COUNCIL FOR TECHNICAL EDUCATION (AICTE), under Grant 8023/BOR/RID/RPS-253/2008-09.

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineeringNational Institute of TechnologySilcharIndia

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