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Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology pp 21–31Cite as

Silicon-Germanium Bipolar Technology

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Abstract

In chapter 3 the silicon-germanium technology used throughout this work is presented. First, different large-signal models and operating points of a bipolar transistor are explained. Additionally, a small-signal model in the active forward region with the resulting small-signal parameters is introduced. The influence of parasitic elements on the performance of bipolar transistors in the millimeter-wave region is analytically described. In the following advantages of the heterostructure principle of a SiGe HBT are given. The structure of the SiGe process from Infineon Technologies is explained different available transistor types with their respective speeds and breakdown voltages are introduced. Furthermore, the scaling technique for a high-performance technology that is partially in used this work is presented. At the end of the chapter different available passive devices as well as their models are presented and the implementation of microstrip lines is explained.

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References

  1. M. Reisch, High-Frequency Bipolar Transistors: Physics, Modeling, Applications. Springer-Verlag, 2003.

    Book  Google Scholar 

  2. J. J. Ebers and J. L. Moll, “Large-signal behavior of junction transistors,” Proc. IRE, vol. 42, no. 12, pp. 1761–1772, Dec. 1954.

    Article  Google Scholar 

  3. U. Tietze and C. Schenk, Halbleiter-Schaltungstechnik, (in German), 13rd ed. Springer-Verlag, 2010.

    Chapter  Google Scholar 

  4. H. Gummel and H. Poon, “A compact bipolar transistor model,” in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, San Francisco, CA, Feb. 1970, pp. 78–79.

    Google Scholar 

  5. P. Ashburn, SiGe Heterojunction Bipolar Transistors. John Wiley & Sons, 2003.

    Google Scholar 

  6. B. Geynet, P. Chevalier, B. Vandelle, F. Brossard, N. Zerounian, M. Buczko, D. Gloria, F. Aniel, G. Dambrine, F. Danneville, D. Dutartre, and A. Chantre, “SiGe HBTs featuring fT > 400 GHz at room temperature,” in Proc. Bipolar/BiCMOS Circuits Technol. Meeting, Monterey, CA, Oct. 2008, pp. 121–124.

    Google Scholar 

  7. J. D. Cressler, Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy. CRC Press, 2006.

    Google Scholar 

  8. J. D. Cressler, “SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications,” IEEE Trans. Microw. Theory Tech., vol. 46, no. 5, pp. 572–589, May 1998.

    Article  Google Scholar 

  9. J. Böck, H. Schäfer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, H. Knapp, M. Wurzer, W. Perndl, T. Böttner, and T. F. Meister, “SiGe bipolar technology for automotive radar applications,” in Proc. Bipolar/BiCMOS Circuits Technol. Meeting, Montreal, Canada, Sep. 2004, pp. 84–87.

    Google Scholar 

  10. M. Hartmann, “Analysis and design of monolithic integrated SiGe mixer circuits for 77 GHz automotive radar,” Ph.D. dissertation, Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany, 2007.

    Google Scholar 

  11. J. Böck, H. Schäfer, H. Knapp, K. Aufinger, M. Wurzer, S. Boguth, T. Böttner, R. Stengl, W. Perndl, and T. F. Meister, “3.3 ps SiGe bipolar technology,” in IEEE Int. Electron Devices Meeting Tech. Dig., San Francisco, CA, Dec. 2004, pp. 255–258.

    Google Scholar 

  12. R. K. Vytla, T. F. Meister, K. Aufinger, D. Lukashevich, S. Boguth, J. Böck, H. Schäfer, and R. Lachner, “Simultaneous integration of SiGe high speed transistors and high voltage transistors,” in Proc. Bipolar/BiCMOS Circuits Technol. Meeting, Maastricht, The Netherlands, Oct. 2006.

    Google Scholar 

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Authors and Affiliations

  1. University of Erlangen-Nuremberg, Erlangen, Germany

    Dietmar Kissinger

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  1. Dietmar Kissinger
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Kissinger, D. (2012). Silicon-Germanium Bipolar Technology. In: Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology. SpringerBriefs in Electrical and Computer Engineering(). Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-2290-7_3

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  • DOI: https://doi.org/10.1007/978-1-4614-2290-7_3

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  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4614-2289-1

  • Online ISBN: 978-1-4614-2290-7

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