Abstract
Since Cu can easily penetrate into SiO2 and low-k dielectrics, it is necessary to have barriers to prevent both Cu-atom diffusion and ion generation and drift into interlayer dielectrics. These barriers can also block oxygen/moisture penetration from the dielectrics into the Cu lines, preventing the oxidation of Cu, which can be the source of Cu ions.
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He, M., Lu, TM. (2012). Barrier Metal–Dielectric Interfaces. In: Metal-Dielectric Interfaces in Gigascale Electronics. Springer Series in Materials Science, vol 157. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-1812-2_6
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