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Metal-Dielectric Interfaces in Gigascale Electronics pp 11–22Cite as

Metal–Dielectric Diffusion Processes: Fundamentals

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 157))

Abstract

There are two main mechanisms by which metal species can migrate into dielectrics. One is diffusion of metal atoms at an elevated temperature driven by the metal concentration gradient. The other is drift of metal-ions as a result of an external electric field. In the latter case, metal-ions have to be generated at the metal–dielectric interface for the drift to begin. The origin of metal-ion generation is related to the chemical interaction between the metal and the dielectric at their interface. For example, a metal oxide may be formed if there is an oxidant residing at the interface. In this chapter, we attempt to describe a coherent treatment of ion generation and drift based on the thermochemistry that occurs at the metal–dielectric interface. The basic formulation of atomic diffusion and ionic drift is reviewed.

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Authors and Affiliations

  1. Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110, 8th Street, Troy, NY, 12180-3590, USA

    Ming He

  2. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 110, 8th Street, CII 6013, Troy, NY, 12180-3590, USA

    Dr. Toh-Ming Lu

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Correspondence to Ming He .

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He, M., Lu, TM. (2012). Metal–Dielectric Diffusion Processes: Fundamentals. In: Metal-Dielectric Interfaces in Gigascale Electronics. Springer Series in Materials Science, vol 157. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-1812-2_2

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  • DOI: https://doi.org/10.1007/978-1-4614-1812-2_2

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  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4614-1811-5

  • Online ISBN: 978-1-4614-1812-2

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