Introduction

Abstract

All major electronic devices and systems contain layers of different materials, including metals, semiconductors, and dielectrics, with electrical resistances spanning a difference of over 20 orders of magnitude. Interfaces between these materials include dielectric-semiconductor, metal-semiconductor and metal-dielectric. A well-known example of the first is the SiO₂–Si interface in the metal-dielectric-semiconductor structure in a Si transistor. The quality of this interface controls the operation of a transistor. Metal-semiconductor interfaces are critical for the operation of rectifying diodes, such as Schottky diodes. Metal-dielectric interface is another important interface, which exists in practically every major electronic system, not only as part of the active devices such as the transistors, but also in the passive components such as interconnects and packaging. In this introductory chapter, we discuss the requirements of such metal-dielectric interfaces in electronic devices and systems, particularly in integrated circuit (IC) applications. Material stability across the metal-dielectric interfaces is required in order to guarantee reliable and consistent electrical functions. Here we discuss metal-dielectric interface stability and its relationship to the operation of advanced gigascale electronic devices and systems.