Using Molecular Modeling Trending to Understand Dielectric Susceptibility in Dielectrics for Display Applications

  • Nancy Iwamoto
  • Ahila Krishnamoorthy
  • Edward W. RutterJr
Chapter

Abstract

Dielectric materials are universally used in the fabrication and packaging of microelectronic and display devices, as well as used in discrete devices such as sensors, switches and photovoltaics. However, as device and interconnect sizes become smaller, the question of the source of electrical failure becomes more and more important. During the development of these materials it has been found that small changes in the molecular structure can lead to small increases in conductivity which is undesirable for most applications. Although important to the final commercial acceptance of the dielectric, leakage current is often one of the final properties measured when developing the chemistry of the dielectric, so a dielectric with very good mechanical properties can ultimately fail at end-user applications due to the poor electrical properties. Knowledge of the susceptibility for electrical failure can be a great aid to the developer, and molecular modeling used in a trend analysis has been found useful to predict tendencies.

Keywords

Mercury Silicate Cage Encapsulation Polyimide 

Notes

Acknowledgments

The authors would like to acknowledge discussions held with Stephen Yates and Kenneth Heffner of Honeywell Aerospace that helped us justify looking into at band-structure trends for leakage susceptibility.

Although all statements and information contained herein are believed to be accurate and reliable, they are presented without guarantee or warranty of any kind, express or implied. Information provided herein does not relieve the user from the responsibility of carrying out his own tests and experiments, and the user assumes all risks and liability for use of the information and results obtained. Statements or suggestions concerning the use of materials and processes are made without representation or warranty that any such use is free of patent infringement and are not recommendations to infringe any patent. The user should not assume that all toxicity data and safety measures are indicated herein or that other measures may not be required.

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Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  • Nancy Iwamoto
    • 1
  • Ahila Krishnamoorthy
    • 1
  • Edward W. RutterJr
    • 1
  1. 1.Honeywell Specialty MaterialsSunnyvaleUSA

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