Power Package Electrical and Multiple Physics Simulation

  • Yong Liu


The electrical performance (such as electrical resistance, inductance, and fusing current capability) is a key factor for a power electronic product. Many studies, such as the electrical performance of different devices, effect of assembly reflow process on electrical properties and the resistance of a solder joint, have been done to improve a product’s electrical performance (Modeling for defects impact on electrical performance of power packages, 2010; A comparison of electrical performance between a wire bonded and a flip chip CSP package, 2003; Intermetallics 14:1375–1378, 2006; Microelectron Eng 63:363–372, 2002). In recent years, the investigation has been started for the electrical conductivity under the mechanical deformation of a device (Microelectron Reliab 46:589–599, 2006). Package design optimization for electrical performance of a power module by using finite element analysis (FEA) (Package design optimization for electrical performance of a power module using finite element analysis, 2008) has also been presented. Studying the impact of the defect on package electrical performance, especially for the parasitic effect, is very important. It can help to understand the potential root causes and failure mechanisms, as well as to ensure that the electrical performance meets the requirement of product by optimizing the package design and assembly process.


Solder Joint Atomic Density Electrical Performance Solder Bump Bond Wire 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. 1.
    Liu Y, Wu C-L, Liu Y et al (2010) Modeling for defects impact on electrical performance of power packages. In: 60th electronic components & technology conference, Las Vegas, NVGoogle Scholar
  2. 2.
    Pan SJ, Kapoor R, Sun AYS, Wang CK, Low HG (2003) A comparison of electrical performance between a wire bonded and a flip chip CSP package. In: Electronics manufacturing technology symposium, San Jose, CAGoogle Scholar
  3. 3.
    Noh BI, Koo JM, Kim JW (2006) Effects of number of reflows on the mechanical and electrical properties of BGA package. Intermetallics 14:1375–1378CrossRefGoogle Scholar
  4. 4.
    Liu DS, Ni CY (2002) A study on the electrical resistance of solder joint interconnections. Microelectron Eng 63(4):363–372CrossRefGoogle Scholar
  5. 5.
    Kwon WS, Ham SJ, Park KW (2006) Deformation mechanism and its effect on electrical conductivity of ACF flip chip package under thermal cycling condition: an experimental study. Microelectron Reliab 46:589–599CrossRefGoogle Scholar
  6. 6.
    Erwin IVA, Paek SH, Lee TK (2008) Package design optimization for electrical performance of a power module using finite element analysis. In: Electronics packaging technology conference, SingaporeGoogle Scholar
  7. 7.
    Liu YM, Carredo MRT, Hu ZP, Liu Y, Luk T, Irving S (2009) Effect of wire bond and die layout on electrical performance of power packages. In: EuroSimE 2009, Delft, The NetherlandsGoogle Scholar
  8. 8.
    Fairchild application report (2000) AN9010, Mosfet Basics (2000), South Portland, ME 04106, USAGoogle Scholar
  9. 9.
    Ancajas E, Cabiluna A (2006) Dynamics of power MOSFETs during the unclamped inductive load testing. In: Technical sharing conference, Fairchild Semiconductor Corporation, South San JoseGoogle Scholar
  10. 10.
    Carredo MRT (2007) How wirebond and die layout affect product ruggedness. In: Technical sharing conference, Fairchild Semiconductor Corporation, Suzhou, ChinaGoogle Scholar
  11. 11.
    Yuan ZF, Liu Y, Irving S, Luk T (2008) Identification and verification by experiment and simulation for the possibility of die cracking induced by UIL test. In: EuroSimE 2008, Freiburg, GermanyGoogle Scholar
  12. 12.
    Huntington B, Grone AR (1961) Current-induced marker motion in gold wires. J Phys Chem Solids 20:76–87CrossRefGoogle Scholar
  13. 13.
    Blech IA, Meieran ES (1967) Direct transmission electron microscope observations of electrotransport in aluminum films. Appl Phys Lett 11:263–266CrossRefGoogle Scholar
  14. 14.
    Black JR (1969) Electromigration—a brief survey and some recent results. IEEE Trans Electron Devices 16(4):338–347CrossRefGoogle Scholar
  15. 15.
    Tu KN (2003) Recent advances on electromigration in very-large-scale-integration of interconnects. J Appl Phys 94(9):5451–5473CrossRefGoogle Scholar
  16. 16.
    Gan H, Choi WJ, Xu G, Tu KN (2002) Electromigration in solder joints and solder lines. J Miner Metal Mater Soc 54(6):34–37CrossRefGoogle Scholar
  17. 17.
    Chae SH, Zhang X, Chao HL, Lu KH, Ho PS et al (2006) Electromigration lifetime statistics for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packages. In: 56th ECTC, San Diego, CA, 2006, pp 650–656Google Scholar
  18. 18.
    Ye H, Basaran C, Hopkins D (2003) Thermomigration in Pb-Sn solder joints under Joule heating during electric current stressing. Appl Phys Lett 82:1045–1047CrossRefGoogle Scholar
  19. 19.
    Basaran C, Lin M (2008) Damage mechanics of electromigration induced failure. Mech Mater 40:66–79CrossRefGoogle Scholar
  20. 20.
    Dalleau D, Weide-Zaage K (2001) Three-dimensional voids simulation in chip-level metallization structures: a contribution to reliability evaluation. Microelectron Reliab 41(9–10):1625–1630Google Scholar
  21. 21.
    Sasagawa K, Hasegawa M, Saka M, Abe H (2002) Prediction of electromigration failure in passivated polycrystalline line. J Appl Phys 91(11):9005–9014CrossRefGoogle Scholar
  22. 22.
    Sukharev V, Zschech E (2004) A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: effect of interface bonding strength. J Appl Phys 96(11):6337–6343CrossRefGoogle Scholar
  23. 23.
    Tan CM, Hou YJ, Li W (2007) Revisit to the finite element modeling of electromigration for narrow interconnects. J Appl Phys 102(3):1–7CrossRefGoogle Scholar
  24. 24.
    Liu Y, Liang L, Irving S et al (2008) 3D Modeling of electromigration combined with thermal-mechanical effect for IC device and package. Microelectron Reliab 48:811–824CrossRefGoogle Scholar
  25. 25.
    Sarychev ME et al (1999) General model for mechanical stress evolution during electro migration. J Appl Phys 86:3068–3075CrossRefGoogle Scholar
  26. 26.
    Chiang KN, Lee CC (2006) Current crowding induced electromigration I SnAg3.0Cu0.5 microbumps. Appl Phys Lett 88(7):072102CrossRefGoogle Scholar
  27. 27.
    Lai Y-S, Chen K-M, Kao C-L, Lee C-W, Chiu Y-T (2007) Electromigration of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy. Microelectron Reliab 47:1273–1279CrossRefGoogle Scholar
  28. 28.
    Basaran C, Lin M (2007) Electromigration induced strain field simulations for nanoelectronics lead-free solder joints. Int J Solids Struct 44:4909–4924CrossRefMATHGoogle Scholar
  29. 29.
    Huang J, Tu KN, Gee S, Nguyen L (2005) The effect of electromigration on eutectic SnPb and Pb-free solders in wafer level-chip scale packages. In: SRC TechCon 2005, Portland, OR, 24–26 Oct 2005Google Scholar
  30. 30.
    Shi Q, Wang ZP, Pang HLJ, Zhou W (1999) Effect of temperature and strain rate on mechanical properties of 63Sn/37Pb solder alloy. Trans ASME J Electron Packaging 121:179–185CrossRefGoogle Scholar
  31. 31.
    Reinikainen O, Marjamaki P, Kivilahti JK (2005) Deformation characteristics and microstructural evolution of SnAgCu solder joints. Deformation characteristics and microstructural evolution of SnAgCu solder joints. In: EuroSime conference proceedings, Berlin, GermanyGoogle Scholar
  32. 32.
    Ouyang FY, Hyang A, Tu KN (2006) Thermomigration in SnPb composite solder joints and wires. In: 56th ECTC, San Diego, CA, pp 1974–1978Google Scholar
  33. 33.
    Liu Y, Wang Q, Liang L et al (2009) A new prediction methodology for electromigration-induced solder degradation in a WL-CSP system. In: 59th electronic components & technology conference, San Diego, CAGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  • Yong Liu
    • 1
  1. 1.Fairchild Semiconductor CorporationSouth PortlandUSA

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