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SRAM Bitcell Design Using Unidirectional Devices

  • Jawar Singh
  • Saraju P. Mohanty
  • Dhiraj K. Pradhan
Chapter

Abstract

For ultra-low power applications, steep sub-threshold slope transistors are promising candidate to replace the traditional MOSFETs. The limitations of Inter-Band Tunnel Field Effect Transistors (TFETs) due to unidirectional current conduction behaviour have been explored in this chapter for successful realization of compact SRAM bitcell for ultra-low supply voltages. Since, asymmetric current conduction in TFETs limits the viability of realization of 6T SRAM bitcells. A case study of 6T SRAM bitcell design using Si-TFETs for reliable operation with low leakage at ultra low voltages is presented. It is also demonstrated that a functional 6T TFET SRAM design with comparable stability margins and faster performances at low voltages can be realized using unidirectional TFETs devices when compared with the 7T TFET SRAM bitcell.

Keywords

Read Operation Sense Amplifier Virtual Ground Static Noise Margin Access Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Jawar Singh
    • 1
  • Saraju P. Mohanty
    • 2
  • Dhiraj K. Pradhan
    • 3
  1. 1.Indian Institute of Information Technology Design and ManufacturingJabalpurIndia
  2. 2.University of North TexasDentonUSA
  3. 3.University of BristolBristolUK

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