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MOSFET/CMOS Technology

  • Simon Li
  • Yue Fu
Chapter

Abstract

In this chapter, we will first simulate a very simple 3D device. A long channel n-type MOSFET (NMOS) is the simplest 3D simulation case for unipolar devices, as it is merely an extension of a 2D simulation. There is no variation along the z direction so only two planes are needed to perform a 3D simulation. The mask layout is fairly simple and a quasi-3D simulation is used. The process steps used in this example is based on the original Stanford SUPREM-IV.GS example 5 with minor modifications.

Keywords

Threshold Voltage Quantum Well CMOS Technology Gate Oxide Mask Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  1. 1.Crosslight Software, Inc.BurnabyCanada

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