Abstract
This chapter reviews the basic theories of device simulation within the framework of TCAD. Figure 3.1 shows a practical design of a device simulator of 3D TCAD capability with various modules. One may regard the drift-diffusion (DD) equation module as central building block of a 3D TCAD device simulator. Optionally, additional modules to perform quantum mechanical calculations and optical modes computation can be built around the main DD module to enhance the application of the simulation program. This is necessary for special applications of 3D TCAD such as nano-scale MOSFET, laser diodes and integrated photonic circuits.
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References
S.M.Sze. Physics of semiconductor devices, 2nd edition. John Wiley & Sons, 1981.
Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors. Azoff, E.M. pp.609-616, s.l. : IEEE Trans. ED, 1989, Vol. 36.
Close-form method for solving the steady-state generalised energy momentum conservation equations. Azoff, E.M. 25–30, s.l. : COMPEL, 1987, Vol. 6.
Smith, R. A. Semiconductors 2nd edn. Cambridge, England : Cambridge University Press, 1978.
D. Bednarczyk and J. Bednarczyk. 64A, 409, s.l. : Phys. Letters, 1978.
Use of Fermi statistics in two dimensional numerical simulation of heterojunction devices. Z.-M. Li, S.P. McAlister and C.M. Hurd,. 408, s.l. : Semicond. Sci.Techn., 1990, Vol. 5.
Physical modeling of degenerately doped compound semiconductors for high-performance HBT design. James C. Li, Marko Sokolich, Tahir Hussain, Peter M. Asbeck. 1440C1449, s.l. : Solid-State Electronics, 2006, Vol. 50.
A physically based mobility model for numerical simulation of non-planar devices. C. Lombardi, S. Manzini, A. Saporito, and M. Vanzi. no.11 pp.1164-1171, s.l. : IEEE CAD, Nov.1988, Vol. 7.
Selberherr, S. Analysis and simulation of semiconductor devices. New York : Springer-Verlag, 1984.
Ionization rates for electrons and holes in silicon. Chynoweth, A.G. p. 1537, s.l. : Phys., Rev., 1958, Phys. Rev, Vol. 109.
Selberherr, S. Analysis and simulation of semiconductor devices. Wien-New York : Springer-Verlag, 1984.
Sze, C.R. Crowell and S.M. no.6 pp. 242–244, s.l. : Appl. Phys. Lett.,, 1966, Vol. 9.
Blokhintsev, D.I. Quantum mechanics. Dordrecht-Holland : D. Reidel Publishing Company, 1964.
Efficient band-structure calculation of strained quantum-wells. Chuang, S.L. B, 43, 9649–9661, s.l. : Phys. Rev., 1991.
A model for GRIN-SCH-SQW diode lasers. S.R. Chinn, P.S. Zory and A.R. Reisinger. QE-24, 2191–2214, s.l. : IEEE J. Quantum Electron., 1988.
Threshold current of single quantum well lasers: The role of the confining layers. J. Nagle, S. Hersee, M. Krakowski, T. Well, and C. Welsbuch. No.20, 1325, s.l. : Appl.. Lett., 1986, Vol. 49.
Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers. G. Fuchs, C. Schiedel, A. Hangleiter, V. Harle, and F. Scholz,. 396–398, s.l. : Appl. Phys. Lett., 1993, Vol. 62.
Band mixing effects on quantum well gain. S. Colak, R. Eppenga, and M.F.H. Schuurmans. QE-23, 960–967, s.l. : IEEE J. PilkuhnQuantum Well Electron, 1987.
New k.p thoery for GaAs/Ga1−xAlxAs-type quantum wells. R. Eppenga, M.F.H. Schuurmans, and S. Colak. 1554–1564, s.l. : Phys. Rev.,, 1987, Vol. 36.
Superlattice band structure in hte envelope-function approximation. Bastard, G. 5693–5697, s.l. : Phys. Rev.,, 1981, Vol. 24.
L.C. Andreani, A. Pasquarello, and F. Bassani. Phys. Rev., s.l. : Phys. Rev., 1987.
Chuang, S. L. Physics of Optoelectronic Devices. New York : Wiley,, 1995.
F.Wooten. Optical properties of solids. New York and London : Academic Press, 1972.
Anisotropy and broadening of optical gain in a GaAs/AlGaAs multiquantum-well laser. M. Yamada, S. Ogita, M. Yamagishi, and K. Tabata. QE-21, 640–645, s.l. : IEEE. J. Quantum, 1985.
Systematics of laser Ishigurooperation in GaAs/AlGaAs multiquantum well heterostructures. E. Zielinski, H. Schweizer, S. Hausser, R. Stuber, M. H. Pilkuhn, and G.Weimann. QE-23, 969–976, s.l. : J. Quantum Electron., 1987.
Optical gain and loss processes in GaInAs/InP MQW laser structure. E. Zielinski, F. Keppler, S. Hausser, M. H. Pilkuhn, and R. Sauer and W.T.Tsang. QE-25, 1407–1416, s.l. : J.Quantum Electron., 1989.
Corrections to the expression of gain in GaAs. R.H. Yan, S.W. Corzine, L.A. Coldren, and I. Suemune. QE-26, 213–216, s.l. : IEEE J. Quantum Electron., 1990.
Optical Gain of Strained Wurtzite GaN QuantumWell Lasers. Chuang, Shun Lien. No.10 p1791, s.l. : IEEE JOURNAL OF QUANTUM ELECTRONICS, OCTOBER 1996, Vol. 32.
k.p method for strained wurtzite semiconductors. Chang, S. L. Chuang and C. S. pp. 2491–2504, s.l. : Phys. Rev. B, July, 1996., Vol. 54.
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor Transmodeling. Wachutka, G.K. CAD-9, 1141–1149, s.l. : IEEE Trans., 1990.
Electrical current in solids with position dependent band structure. Vilet, A. Marshak and K. van. 21, 417–427, s.l. : Solid State Electron.,, 1978.
Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two dimensional numerical simulation. L. Liou, J. Ebel, and C Huang. ED-40, 35–43, s.l. : IEEE Trans. ED, 1993.
Semiconductor current flow equations (diffusion and degeneracy). R. Stratton. ED-19, 1288–1292, s.l. : IEEE., ED, 1972.
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Li, S., Fu, Y. (2012). Advanced Theory of TCAD Device Simulation. In: 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-0481-1_3
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