Abstract
In the previous chapter, it has been demonstrated that the silicon carbide planar-shielded inversion-mode power MOSFET structure has excellent on-state resistance for devices with breakdown voltage of up to 10,000 V. However, the specific on-resistance for these devices becomes relatively large when their blocking voltage is scaled to 20,000 V. Consequently, there has been interest in the development of silicon carbide-based high voltage IGBT structures. Due to the high resistivity of P-type substrates in silicon carbide, most of the development work has been focused on p-channel silicon carbide IGBT structures that can utilize heavily doped N-type substrates.
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Baliga, B.J. (2011). Silicon Carbide IGBT. In: Advanced High Voltage Power Device Concepts. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-0269-5_7
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DOI: https://doi.org/10.1007/978-1-4614-0269-5_7
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