Stabilization of High-Tc Phase in Sputtered BiPbSrCaCuO Films by Post Anneal
The post anneal was investigated for amorphous (Bi,Pb)2Sr2Ca2Cu3Ox films deposited on (100) planes of MgO at about 400°C. The films were annealed in a closed Pt crucible together with a sintered bulk including Pb to supply enough constituent metal atoms in vapor. Also the film surface was covered by a MgO plate to suppress a change of the film composition during anneal. The film which contained the high-Tc phase above 70 % was obtained and the maximum Tc of zero resistance attained up 105 K. The results obtained revealed that the addition of Pb and/or the reduced pressure of oxygen were effective to promote the growth of the high-Tc phase under the conditions ensuring the stoichiometry during anneal.
KeywordsCrystallization Furnace Anisotropy Argon Cystal
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