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Doping profiling by inverse device methods

  • Avner Friedman
Part of the The IMA Volumes in Mathematics and its Applications book series (IMA, volume 67)

Abstract

The most important step in the fabrication of semiconductor device is the controlled implantation of impurity atoms into the semiconductor crystal; this is called doping. Doping produces either an excess of conduction electrons, or excess of “holes.” Direct experimental methods are unable to resolve the profile of the doping (i.e., the concentration of electrons or holes which resulted from doping) to the accuracy required by today’s technology developments (whereby millions of devices are built on one chip). On May 5, 1994 Marius Orlowski from Motorola presented the physical background and the issues involved in determining the doping profile. Researchers have attempted in recent years to extract the impurity profiles from electrical measurements.

Keywords

Conduction Electron Semiconductor Device Debye Length Doping Profile Impurity Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag New York, Inc. 1995

Authors and Affiliations

  • Avner Friedman
    • 1
  1. 1.Institute for Mathematics and its ApplicationsUniversity of MinnesotaMinneapolisUSA

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