Doping profiling by inverse device methods
The most important step in the fabrication of semiconductor device is the controlled implantation of impurity atoms into the semiconductor crystal; this is called doping. Doping produces either an excess of conduction electrons, or excess of “holes.” Direct experimental methods are unable to resolve the profile of the doping (i.e., the concentration of electrons or holes which resulted from doping) to the accuracy required by today’s technology developments (whereby millions of devices are built on one chip). On May 5, 1994 Marius Orlowski from Motorola presented the physical background and the issues involved in determining the doping profile. Researchers have attempted in recent years to extract the impurity profiles from electrical measurements.
KeywordsConduction Electron Semiconductor Device Debye Length Doping Profile Impurity Profile
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- A. Friedman, Mathematics in Industrial Problems,IMA Volume 16, Springer—Verlag, New York (1988).Google Scholar
- A. Friedman, Mathematics in Industrial Problems,Part 4, IMA Volume 38, Springer—Verlag, New York (1991).Google Scholar
- S.H. Goodwin-Johansson, R. Subrahmanyan, C.E. Floyd and H.Z. Massoud, Two-dimensional impurity profiling with emission computed tomography techniques, IEEE-TCAD, CAD-8(4), 1989.Google Scholar
- W.C. Johnson and P.T. Panousis, The influence of Debye length on the C-V measurement of doping profiles, IEEE Trans. Electron Devices, ED-18 (1971), 954–978.Google Scholar
- R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, Wiley & Sons, New York (1977).Google Scholar
- G.J.L. Ouwerling, F. van Rijs, H.M. Wentinck, J.C. Staalenburg and W. Crans, Physical parameter extraction by inverse modelling of semiconductor devices, in “Simulation of Semiconductor Devices and Processes,” Vol. 3, Edited by G. Baccarani, M. Rudan, Bologna, September 1988, 599–610.Google Scholar
- S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer—Verlag, Wien—New York (1986).Google Scholar
- P.A. Markowich, The Stationary Semiconductor Device Equations, Springer—Verlag, Wien—New York (1986).Google Scholar