Abstract
The diffusion of dopants in silicon at high temperatures is modeled by a nonlinear parabolic system of partial differential equations on a two-dimensional region with a moving boundary. Anumerical solution using the L-stable TRBDF2 time integration method and a “box method” spatial discretization is described. Details are given of the methods used to specify and manipulate curves, and to define arbitrary simply connected regions by their boundary curves. Numerical experiments are presented comparing the divided difference and TR/TR methods for dynamically adjusting the timestep, and comparing Newton and Newton-Richardson iteration.
Research supported in part by the National Science Foundation under grant DMS-8905872
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© 1994 Springer-Verlag New York, Inc.
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Johnson, M.J., Gardner, C.L. (1994). An Interface Method for Semiconductor Process Simulation. In: Coughran, W.M., Cole, J., Llyod, P., White, J.K. (eds) Semiconductors. The IMA Volumes in Mathematics and its Applications, vol 58. Springer, New York, NY. https://doi.org/10.1007/978-1-4613-8407-6_3
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DOI: https://doi.org/10.1007/978-1-4613-8407-6_3
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