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Intervalley Phonon Raman Scattering in Many-Valley Semiconductors

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Book cover Theory of Light Scattering in Condensed Matter

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Abstract

Theoretical calculations of the Raman cross-sections for resonant intervalley phonon scattering near the indirect gap and the higher direct gap energies in many-valley semiconductors are reported, and the possibility of observing these effects experimentally is discussed. Band structure calculations are employed to compute the intervalley deformation potentials and the cross-sections of light scattering processes for typical semiconductors.

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References

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Author information

Authors and Affiliations

  1. Naval Research Laboratory, Washington D.C., 20375, USA

    P. J. Lin-Chung & K. L. Ngai

Authors
  1. P. J. Lin-Chung
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  2. K. L. Ngai
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Editor information

Editors and Affiliations

  1. Solid State Sciences Division, Rome Air Development Center, Hanscom AFB, Massachusetts, USA

    Bernard Bendow

  2. Department of Physics, The City College of the City University of New York, New York, New York, USA

    Joseph L. Birman

  3. Institute of Spectroscopy, Academy of Sciences of the USSR, Akademgorodok, Moscow, USSR

    Vladimir M. Agranovich

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© 1976 Plenum Press, New York

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Lin-Chung, P.J., Ngai, K.L. (1976). Intervalley Phonon Raman Scattering in Many-Valley Semiconductors. In: Bendow, B., Birman, J.L., Agranovich, V.M. (eds) Theory of Light Scattering in Condensed Matter. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4301-1_11

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  • DOI: https://doi.org/10.1007/978-1-4613-4301-1_11

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-4303-5

  • Online ISBN: 978-1-4613-4301-1

  • eBook Packages: Springer Book Archive

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