Abstract
The nature of the defects introduced into n-type silicon by implantation of 8 MeV boron ions has been investigated by thermally stimulated current measurements performed directly on the produced p-n junctions. These curves, analysed by the “delaying heating method”, are compared to those obtained for low energy implants. Levels located at EC -0.18, EC -0.42, EV +0.26, EV +0.32 eV are identified. They are quite the same as those observed for low energy implants achieved in the same materials, their annealing however occurs at higher temperature.
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© 1977 Plenum Press, New York
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Muller, J.C., Stuck, R., Siffert, P., Kalbitzer, S. (1977). Defects Introduced into Silicon by Boron Implantation in the MeV Energy Range. In: Chernow, F., Borders, J.A., Brice, D.K. (eds) Ion Implantation in Semiconductors 1976. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4196-3_8
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DOI: https://doi.org/10.1007/978-1-4613-4196-3_8
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