Abstract
A three-stream diffusion model for boron in silicon is proposed. The model is capable of predicting ordinary diffusion, proton enhanced diffusion and the annealing behavior of room-temperature-implanted boron when appropriate restrictions on dose and annealing temperature are obeyed. Parameters required in the model were selected so that the model would correctly predict the impurity profiles that are obtained under conventional thermal diffusion conditions. The same parameter set is then used in the annealing calculation for implanted boron.
The computed profiles and electrical activities as a function of time compare very well with experimental data published in the literature. When the implantation dose exceeds 1015 ions/cm2 and/or the annealing temperature is below 900°C, precipitation effects may occur. We outline a systematic approach to incorporate these effects into the basic three stream model.
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References
J. R. Anderson and J. F. Gibbons, “New Boron Diffusion in Silicon,” Appl. Phys. Letters 28, 184 (1976).
J. R. Anderson and J. F. Gibbons, “Measurements of Diffusion Parameters in Silicon Using Proton Enhanced Diffusion,” Appl. Phys. Letters, in press.
W. K. Hofker, H. W. Werner, D. P. Oosthoek, H. A. M. de Grefte, “Influence of Annealing on the Concentration Prof. of Boron Implantations in Si,” Applied Physics 2, 265–278, Springer- Verlag, 1973.
W. K. Hofker, H. W. Werner, D. P. Oosthoek, N. J. Koenan, “Boron Implantations in Silicon: A Comparison of Charge and Boron Cone. Profiles,” Applied Physics 4, 125–133, Springer-Verlag, 1974.
D. K. Brice, “Spatial Distribution of Energy Deposited Into Atomic Processes in Ion Implanted Silicon,” Proc. of the First Int. Conf. on Ion Imp. in Semiconductors, Thousand Oaks, CA, Gordon and Breach Pub., New York, 1970.
J. E. Westmoreland, J. W. Meyer, F. H. Eisen, B. Welch, “Production and Annealing of Lattice Disorder by 200 Kev Boron Ions,” Appl. Phys. Letters 15, no. 9, Nov. 1969.
Tom Magee, personal communication.
T. E. Seidel and A. U. MacRae, “The isothermal Annealing of Boron Implanted Silicon,” Proc. of the First Int. Conf. on Ion Imp. in Semiconductors, Thousand Oaks, CA, Gordon and Breach Pub., New York, 1970.
T. E. Seidel and A. U. MacRae, “Some Properties of Boron Implanted Silicon,” Trans, of the Metallurgical Society of AIME, Vol. 245, 497, March 1969.
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© 1977 Plenum Press, New York
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Chu, A., Gibbons, J.F. (1977). A Theoretical Approach to the Calculation of Impurity Profiles for Annealed, Ion Implanted B in Si. In: Chernow, F., Borders, J.A., Brice, D.K. (eds) Ion Implantation in Semiconductors 1976. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4196-3_74
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DOI: https://doi.org/10.1007/978-1-4613-4196-3_74
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