A Theoretical Approach to the Calculation of Impurity Profiles for Annealed, Ion Implanted B in Si
A three-stream diffusion model for boron in silicon is proposed. The model is capable of predicting ordinary diffusion, proton enhanced diffusion and the annealing behavior of room-temperature-implanted boron when appropriate restrictions on dose and annealing temperature are obeyed. Parameters required in the model were selected so that the model would correctly predict the impurity profiles that are obtained under conventional thermal diffusion conditions. The same parameter set is then used in the annealing calculation for implanted boron.
The computed profiles and electrical activities as a function of time compare very well with experimental data published in the literature. When the implantation dose exceeds 1015 ions/cm2 and/or the annealing temperature is below 900°C, precipitation effects may occur. We outline a systematic approach to incorporate these effects into the basic three stream model.
KeywordsElectrical Activity Boron Concentration Impurity Profile Annealing Behavior Ordinary Diffusion
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