Ag-Ion Implantation into ZnSe
ZnSe crystals grown both from the melt and from the vapour phase have been implanted at 600 K with 100 keV Ag-ions. Thermoelectric probe measurements and the rectifying method confirm that these layers annealed at 800 K are p-type at room temperature. With increasing Ag-doses especially the implanted layers in low resistivity ZnSe crystals become more p-type conducting.
The spectral distribution of photoluminescence yields the expected rise of the Ag-peak (552 nm) with increasing doses. At 80 K the low resistivity samples exhibit a bright dc electroluminescence with an emission peak at 552 nm, too. Polarized in the forward direction the emission starts at 5 V, and in the reverse direction at about 20 V. The electroluminescence intensity decreases above 280 K.
The temperature dependence of photoluminescence and -conductivity as well as the TSC-curves have also been studied. The measurements will be discussed by means of a band model.
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