Abstract
Ion channeling, backscattering and ion-induced X-ray measurements have been done to study the effects of dual implantation and annealing atmosphere on lattice locations and atom profiles of Sn and Sb implanted in GaP.
Sn atoms implanted at 400°C are found to be ~80% on Ga substitutional sites, while Sb atoms implanted at 400°C are found to be ~100% on P substitutional sites. After annealing using an SiO2 cap,the substitutional fraction of Sn decreases to 20%. Sn and Sb atoms implanted at room temperature are found to be on off-lattice sites even after annealing at 700°C. In case of dual implantation, the substitutional fraction of Sn after annealing is decreased by Ga implantation, while it is increased by P implantation. Diffusion of Sn implanted at 400°C is enhanced by P implantation, while it is suppressed by Ga implantation and by annealing in ampoules sealed with excess GaP.
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References
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© 1977 Plenum Press, New York
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Takai, M., Gamo, K., Ishida, T., Masuda, K., Namba, S., Mizobuchi, A. (1977). Effects of Dual Implantations and Annealing Atmosphere on Lattice Locations and Atom Profiles of Sn and Sb Implanted in GaP. In: Chernow, F., Borders, J.A., Brice, D.K. (eds) Ion Implantation in Semiconductors 1976. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4196-3_61
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DOI: https://doi.org/10.1007/978-1-4613-4196-3_61
Publisher Name: Springer, Boston, MA
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