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Annealing of Defects in Ion-Implanted Layers by Pulsed Laser Radiation

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Ion Implantation in Semiconductors 1976

Abstract

The annealing of ion-implanted layers by laser pulses of high power is extremely interesting for several reasons. First of all, sufficiently short light pulses with photon energies exceeding the forbidden band of the semiconductor will heat only thin surface layers. As a result, it is possible to anneal radiation defects in the implanted layers without undesirable heating of the bulk. Secondly, use of focused light beams makes it possible to carry out local annealing at different temperatures all over the sample. Finally, pulsed laser irradiation is characterized by a time constant of 10-3–10-11 sec, and is accompanied not only by heating but also by effective ionization, shock waves, and quenching. All these factors affect the annihilation of defects and their interaction with impurities.

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References

  1. G. A. Kachurin, N. B. Pridachin, and L. S. Smirnov, Fiz. Tekh. Poluprovod., 9: 1428, 1975.

    Google Scholar 

  2. V. A. Bogatyriov, A. A. Gavrilov, G. A. Kachurin, and L. S. Smirnov, Fiz. Tekh. Poluprovod., 10: 1392, 1976.

    Google Scholar 

  3. Lian Chi-Chao and D.N. Nazledov, Fiz. Tverd. Tela, 3: 1458, 1961.

    Google Scholar 

  4. V. V. Gavrushko and O. V. Kosogov, Fiz. Tekh. Poluprovod., 4: 2378, 1970.

    Google Scholar 

  5. J. W. Cleland and J. H. Crawford, Jr., Phys. Rev. 95: 1177, 1954.

    Article  ADS  Google Scholar 

  6. A. G. Foyt, W. T. Lindley, and J. P. Donnely, Appl. Phys. Lett., 16: 395, 1970.

    Article  Google Scholar 

  7. K. H. Wiedeburg, H. Betz, and H. Kranz, Phys. Stat. Sol. (a), 31: K69, 1975.

    Article  ADS  Google Scholar 

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Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics, Novosibirsk, 90, USSR

    G. A. Kachurin, V. A. Bogatyriov, S. I. Romanov & L. S. Smirnov

Authors
  1. G. A. Kachurin
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  2. V. A. Bogatyriov
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  3. S. I. Romanov
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  4. L. S. Smirnov
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Editor information

Editors and Affiliations

  1. University of Colorado, Boulder, Colorado, USA

    Fred Chernow

  2. Sandia Laboratories, Albuquerque, New Mexico, USA

    James A. Borders  & David K. Brice  & 

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© 1977 Plenum Press, New York

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Kachurin, G.A., Bogatyriov, V.A., Romanov, S.I., Smirnov, L.S. (1977). Annealing of Defects in Ion-Implanted Layers by Pulsed Laser Radiation. In: Chernow, F., Borders, J.A., Brice, D.K. (eds) Ion Implantation in Semiconductors 1976. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4196-3_47

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  • DOI: https://doi.org/10.1007/978-1-4613-4196-3_47

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-4198-7

  • Online ISBN: 978-1-4613-4196-3

  • eBook Packages: Springer Book Archive

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