Abstract
Crystal defects formed in (111) silicon substrates implanted with phosphorus ions through SiO2 layers are investigated as a function of implantation dose, energy, temperature, and oxide thickness using a transmission electron microscope. The density of these defects becomes maximum for samples with SiO2 film thicknesses slightly smaller than the projected range of phosphorus ions in SiO2 and they are not detected in samples having a SiO2 film thicker than 2 times the projected range. These results are independent of implantation energy in the range between 50 and 350 keV. Comparing these results and observations of depth distribution of defects with Monte Carlo calculations of the yield of recoil oxygen atoms into silicon, the variation of defect density is closely related to the quantity of recoil oxygen atoms. Defect elimination methods are also discussed.
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© 1977 Plenum Press, New York
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Tamura, M., Natsuaki, N., Miyao, M., Tokuyama, T. (1977). Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implantations. In: Chernow, F., Borders, J.A., Brice, D.K. (eds) Ion Implantation in Semiconductors 1976. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4196-3_41
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DOI: https://doi.org/10.1007/978-1-4613-4196-3_41
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