The Influence of Recoil Implantation of Absorbed Oxygen on the Entrapment of Xenon in Aluminum and Silicon
Xenon collection in polycrystalline aluminium and amorphized silicon has been studied by means of Rutherford backscattering. Implantations were carried out at energies between 10 and 160 keV, current densities between 0.07 and 5 μA/cm2, and oxygen partial pressures between < 10-8 and 10-5 Torr. It was found that the saturation areal densities of collected material strongly increased with increasing oxygen partial pressure during implantation. Simultaneously, pronounced accumulation of oxygen in the target was observed. This effect is attributed to recoil implantation of adsorbed oxygen. Enhanced collection of xenon is explained by assuming that oxygen acts as a trap for implanted xenon. Based upon a simple model a consistent interpretation of recoil implantation from adsorbed oxygen layers could be obtained.
KeywordsDioxide Argon Helium Nism Xenon
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