Abstract
Radiation damage produced by room temperature ion implantation into single crystal Al 2O3 has been studied by a combination of optical absorption spectroscopy, Rutherford backscattering-channeling (RBC) and channeled proton-induced x-ray (CPIX) measurements. For implantations with light ions, optical absorption at 204 nm is a linear function of fluence below 1016cm-2. For heavy ions the intensity of the 204 nm absorption band increases linearly for low fluences, reaches a maximum for displacing energy densities of about 1020–1021keV cm-3, and decreases for higher energy depositions. The displacement damage curves obtained with RBC and CPIX techniques are linear at low fluences and saturate at higher fluences. The quenching of the 204 nm absorption occurs in the linear growth portion of the displacement damage curves. Samples implanted with Xe or Ar ions showed no measurable decrease in displacement damage by radiation annealing when irradiated with 50 keV protons.
Work supported by the U.S. Energy Research and Development Administration (ERDA) under Contract E(29-l)789 and the Department of the Army (TRMS #7-CO-000-PB6-WS1-005).
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© 1977 Plenum Press, New York
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Luera, T.F., Borders, J.A., Arnold, G.W. (1977). Studies of Radiation Damage Produced by Ion Implantation in Sapphire. In: Chernow, F., Borders, J.A., Brice, D.K. (eds) Ion Implantation in Semiconductors 1976. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4196-3_32
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DOI: https://doi.org/10.1007/978-1-4613-4196-3_32
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