Solubility Enhancement in Ion Implanted Cu Alloys

  • J. M. Poate
  • J. A. Borders
  • A. G. Cullis
  • J. K. Hirvonen

Abstract

We have been studying1,2 the lattice site location and microstructure of metal atom implants in Cu by channeling and transmission electron microscopy measurements. At low atomic concentration, 1 at.%, the implanted metallic species reside primarily on substitutional Cu lattice sites. It was found from the previous study that high-dose implants of Au and W in Cu (10 at.%) were in general accordance with equilibrium phase diagram criteria in that they were 100% and 0% substitutional respectively.

Keywords

Radar Channeling 

References

  1. 1.
    J.A. Borders and J.M. Poate, Phys. Rev. B 13, 969 (1976).ADSCrossRefGoogle Scholar
  2. 2.
    A.G. Cullis, J.M. Poate and J.A. Borders, Appl. Phys. Lett. 28, 315 (1976).ADSCrossRefGoogle Scholar
  3. 3.
    P. Duwez in Progress in Solid State Chemistry, edited by H. Reiss (Pergamon Press, Oxford, 1967), Vo. 3.Google Scholar

Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • J. M. Poate
    • 1
  • J. A. Borders
    • 2
  • A. G. Cullis
    • 3
  • J. K. Hirvonen
    • 4
  1. 1.Bell LaboratoriesMurray HillUSA
  2. 2.Sandia LaboratoriesAlbuquerqueUSA
  3. 3.Royal Radar EstablishmentGreat MalvernEngland
  4. 4.Naval Research LaboratoriesUSA

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