Sheet Resistivity and Hall Effect Measurements of Aluminium Implanted Silicon and Silicon Films on Sapphire

  • G. Holmén
  • S. Peterström

Abstract

Bulk silicon and silicon films on sapphire have been implanted with 40 keV aluminium ions. The doses used were between 2.5 x 1012 and 1.0 x 1016 ions/cm2. The annealing behaviour of the implanted layers was studied by sheet resistivity and Hall effect measurements. The annealing was performed in the temperature range 300 to 800°C. As a rule the sheet resistivity was found to be higher for aluminium implantations in silicon on sapphire than corresponding implantations in bulk silicon. It was also found that the recrystallization of a continuous amorphous layer occurs at 500°C in silicon (100) on sapphire, which is about 50°C lower than in bulk silicon (111).

Keywords

Phosphorus Boron Recrystallization Resis Sapphire 

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References

  1. 1.
    J.W. Mayer, L. Eriksson, and J.A. Davies, Ion Implantation in Semiconductors, Academic Press, New York, 1970.Google Scholar
  2. 2.
    G. Dearnaley, J.H. Freeman, R.S. Nelson, and J.H. Stephen, Ion Implantation. North Holland, Amsterdam, 1973.Google Scholar
  3. 3.
    K.H. Eklund, G. Holmén, and S. Peterström, Appl. Phys. Lett. 24, 283 (1974).ADSCrossRefGoogle Scholar
  4. 4.
    R. Baron, G.A. Shifrin, D.J. Marsh, and J.W. Mayer, J. Appl. Phys. 40, 3702 (1969).ADSCrossRefGoogle Scholar
  5. 5.
    T.E. Seidel and A.U. MacRae, Trans. AIME 245, 491 (1969).Google Scholar
  6. 6.
    Å. Andersson and G. Swenson, Rad. Effects 15 231 (1972).CrossRefGoogle Scholar
  7. 7.
    S. Peterström and G. Holmén, Physica Scripta 10, 142 (1974).ADSCrossRefGoogle Scholar
  8. 8.
    K.H. Eklund and Å. Andersson, Proc. II Int. Conf. on Ion Implantation in Semiconductors (ed. I. Ruge and J. Graul ), Springer Verlag, Berlin, 1971, p. 103.Google Scholar
  9. 9.
    F.L. Vook, Proc. Int. Conf. on Radiation Damage and Defects in Semiconductors, Reading, 1972, p. 60.Google Scholar
  10. 10.
    N.G. Blamires, M.D. Matthews, and R.S. Nelson, Phys. Lett. 28A, no 3, 178 (1968).ADSGoogle Scholar
  11. 11.
    L. Csepregi, J.W. Mayer, and T.W. Sigmon, Appl. Phys. Lett. 29, 92 (1976).ADSCrossRefGoogle Scholar
  12. 12.
    G. Holmén, S. Peterström, A. Burén, and E. Bøgh, Rad. Effects 24, 45 (1975).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • G. Holmén
    • 1
  • S. Peterström
    • 1
  1. 1.Department of PhysicsChalmers University of TechnologyGothenburg 5Sweden

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