Abstract
Photoluminescence of Cd implanted GaAs with and without As preimplantation has been measured to study the effect of As dual implantation. Three emission bands at 1.479, 1.454 and 1.392 eV at 90 K were mainly observed after the implantation and annealing at 800°C, these were ascribed to Cd acceptors, defects which were observed only for As implantation, and As and Cd dual implantation, and defects which seem to be associated with As vacancy, respectively. Temperature dependence of emission intensity, linewidth and peak energy was measured to characterize the emission centers. It was found from the profiling of the 1.392 eV emission that the diffusion of As vacancy is suppressed by As implantation.
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© 1977 Plenum Press, New York
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Aoki, K., Gamo, K., Masuda, K., Namba, S. (1977). Photoluminescence of Cd-Ion Implanted GaAs. In: Chernow, F., Borders, J.A., Brice, D.K. (eds) Ion Implantation in Semiconductors 1976. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4196-3_14
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DOI: https://doi.org/10.1007/978-1-4613-4196-3_14
Publisher Name: Springer, Boston, MA
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