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Electrical Properties of Cd- and Te-Implanted GaAs

  • B. K. Shin
  • Y. S. Park
  • J. E. Ehret

Abstract

Sheet-resistivity and Hall-effect measurements were made on Cd- or Te-implanted GaAs samples. During annealing the sample surfaces were protected with pyrolytically deposited Si 3N4. In the Cd- implanted samples, nearly complete electrical activity was obtained after an 800–900°C anneal for doses below 1014 Cd/cm2. For Te implants the doping efficiencies were lower even after the 900°C anneal, and the Te-donor-induced self-compensation of residual defects (of the VcaTe complex type) associated with the implantation process is thought to be responsible for the results obtained.

Keywords

Diffusion Profile GaAs Surface Target Chamber Solid Solubility Concentration Doping Efficiency 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • B. K. Shin
    • 1
  • Y. S. Park
    • 2
  • J. E. Ehret
    • 2
  1. 1.Systems Research Laboratories, Inc.DaytonUSA
  2. 2.Air Force Avionics LaboratoryWright-Patterson Air Force BaseUSA

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