Electrical Properties of Cd- and Te-Implanted GaAs
Sheet-resistivity and Hall-effect measurements were made on Cd- or Te-implanted GaAs samples. During annealing the sample surfaces were protected with pyrolytically deposited Si 3N4. In the Cd- implanted samples, nearly complete electrical activity was obtained after an 800–900°C anneal for doses below 1014 Cd/cm2. For Te implants the doping efficiencies were lower even after the 900°C anneal, and the Te-donor-induced self-compensation of residual defects (of the VcaTe complex type) associated with the implantation process is thought to be responsible for the results obtained.
KeywordsDiffusion Profile GaAs Surface Target Chamber Solid Solubility Concentration Doping Efficiency
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- 7.The pyrolytic encapsulations were performed at MIT Lincoln Laboratory, Lexington, MA.Google Scholar
- 8.J. Lindhard, M. Scharff, and H.E. Schlott, Mat. Fys. Medd. Dan. Vid. Selsk. 33, No. 14 (1963); see also, J. F. Gibbons, W. S. Johnson, and S. W. Mylroie, Projected Range Statistics ( Halsted Press, New York, 1975 ).Google Scholar