Electrical Properties of Cd- and Te-Implanted GaAs
Sheet-resistivity and Hall-effect measurements were made on Cd- or Te-implanted GaAs samples. During annealing the sample surfaces were protected with pyrolytically deposited Si 3N4. In the Cd- implanted samples, nearly complete electrical activity was obtained after an 800–900°C anneal for doses below 1014 Cd/cm2. For Te implants the doping efficiencies were lower even after the 900°C anneal, and the Te-donor-induced self-compensation of residual defects (of the VcaTe complex type) associated with the implantation process is thought to be responsible for the results obtained.
KeywordsAcetone Cadmium GaAs Isopropyl Alcohol Encapsulation
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- 7.The pyrolytic encapsulations were performed at MIT Lincoln Laboratory, Lexington, MA.Google Scholar
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