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Impurity Interactions with Structural Defects in Irradiated Silicon

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Neutron-Transmutation-Doped Silicon

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Abstract

Silicon irradiated in a reactor will suffer damage as a result of the γ-flux, β-recoils and fast neutron collisions. Damage of the first type should resemble that produced by fast electron irradiation. Direct neutron collisions are most easily investigated in material that has been subjected to high fluences in reactors which may be less than ideal for the production of NTD silicon. Damage produced in these two ways will be discussed and special emphasis will be given to the information obtained from infrared absorption measurements, especially those relating to boron, carbon and oxygen complexes. It will be shown that irradiation and annealing procedures can lead to non-equilibrium defects involving these njnpurities. We shall also report on recent small angle neutron scattering SANS measurements which allow the sizes of clusters and the absolute numbers of defects involved to be estimated.

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Author information

Authors and Affiliations

  1. J.J. Thomson Physical Laboratory, University of Reading, Reading, RG6 2AF, UK

    R. C. Newman

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  1. R. C. Newman
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  1. Topsil A/S, Frederikssund, Denmark

    Jens Guldberg (Conference Chairman) (Conference Chairman)

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© 1981 Plenum Press, New York

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Newman, R.C. (1981). Impurity Interactions with Structural Defects in Irradiated Silicon. In: Guldberg, J. (eds) Neutron-Transmutation-Doped Silicon. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-3261-9_5

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  • DOI: https://doi.org/10.1007/978-1-4613-3261-9_5

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-3263-3

  • Online ISBN: 978-1-4613-3261-9

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