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Neutron Transmutation Doping of GaAs

  • M. A. Vesaghi
  • H. Fritzsche

Abstract

Thirty years ago, Cleland, Lark-Horovitz and Pigg1 carried out the first transmutation doping and showed that it is a convenient and highly reproducible method for introducing a homogneous distribution of dopants into certain semiconductors. This work was continued by Fritzsche et al.,2 Cuevas,3 and others4 who made a detailed investigation of the electronic transport properties of transmutation doped Ge down to He temperatures. The method was applied to Te by Kuehnel et al.5 and is now widely used in the manufacture of Si devices.

Keywords

Hall Mobility Donor Concentration Hall Coefficient Thermal Neutron Flux Electronic Transport Property 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    J. W. Cleland, K. Lark-Horovitz, and J. C. Pigg, Phys. Rev. 78: 814 (1950).CrossRefGoogle Scholar
  2. 2.
    H. Fritzsche and M. Cuevas, Phys. Rev. 119: 1238 (1960).CrossRefGoogle Scholar
  3. 3.
    M. Cuevas, Phys. Rev. 164: 1021 (1967).CrossRefGoogle Scholar
  4. 4.
    S. Golin, Phys. Rev. 132: 178 (1963).CrossRefGoogle Scholar
  5. 5.
    A. Kuehnel, H. Siethoff, and G. Landwehr, Phys. Stat. Solidi A29: 387 (1975).CrossRefGoogle Scholar
  6. 6.
    Sh. M. Mirianashvili and D. I. Nanobashvili. Soviet Physics, Semiconductors 4: 1612 (1971).Google Scholar
  7. 7.
    We are very grateful to Prof. C. M. Wolfe of Washington University, St. Louis, for making this sample available to us.Google Scholar
  8. 8.
    C. M. Wolfe, G. E. Stillman, and J. P. Dimmock, J. Appl. Phys. 41: 504 (1970).CrossRefGoogle Scholar
  9. 9.
    H. Fritzsche in:“Metal Non-Metal Transition in Disordered Systems,” edited by L. R. Friedman and D. P. Tunstall (Scottish Universities Summer School in Physics, 1978 ) p. 193.Google Scholar
  10. 10.
    H. Fritzsche, Phil. Mag, in press.Google Scholar
  11. 11.
    N. F. Mott, “Metal-Insulator Transitions,” Taylor and Francis, London (1974).Google Scholar
  12. 12.
    M. Cuevas and H. Fritzsche, Phys. Rev. 137: A1847 (1965); ibid 139: A1628 (1965).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • M. A. Vesaghi
    • 1
  • H. Fritzsche
    • 1
  1. 1.James Franck InstituteThe University of ChicagoChicagoUSA

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