Neutron Transmutation Doping of GaAs

  • M. A. Vesaghi
  • H. Fritzsche


Thirty years ago, Cleland, Lark-Horovitz and Pigg1 carried out the first transmutation doping and showed that it is a convenient and highly reproducible method for introducing a homogneous distribution of dopants into certain semiconductors. This work was continued by Fritzsche et al.,2 Cuevas,3 and others4 who made a detailed investigation of the electronic transport properties of transmutation doped Ge down to He temperatures. The method was applied to Te by Kuehnel et al.5 and is now widely used in the manufacture of Si devices.


Hall Mobility Donor Concentration Hall Coefficient Thermal Neutron Flux Electronic Transport Property 
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Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • M. A. Vesaghi
    • 1
  • H. Fritzsche
    • 1
  1. 1.James Franck InstituteThe University of ChicagoChicagoUSA

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