Abstract
Many of the applications of silicon share the need for a high-purity homogeneous material with a controlled concentration of residual shallow and deep impurities. One of its utilization is the fabrication of coupled charge devices (CCD) linked to extrinsic Si detectors arrays. This has given a new impetus to the study of impurities and defects in this material as well as to the need for accurate compensation techniques since spurious effects arise from the presence of uncompensated and unwanted impurities, even at low concentration. Besides atomic impurities, electrical, optical and photoconductive studies have shown the existence in the band gap of silicon of shallow acceptor levels due to impurity complexes whose nature is not yet wholly elucidated1–3.
Work supported in part by D.R.E.T. contract n° 78-077.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R. N. Thomas, T. T. Braggins, H. M. Hobgood, and W. J. Takei, Compensation of residual impurities in extrinsic In-doped Si by neutron transmutation of Si, J. Appl. Phys. 49: 2811 (1978).
M. H. Young, O. J. Marsh, and R. Baron, Shallow defect levels in neutron irradiated p-type extrinsic Si, J. Appl. Phys. 50 3755 (1979).
W. Scott, and C. E. Jones, IR spectra of new acceptor levels in B- and Ga-doped Si, J. Appl. Phys. 50: 7258 (1979).
F. Merlet, B. Pajot, Ph. Areas, and A.M. Jean-Louis, Experimental study of the Zeeman splitting of B-levels in Si, Phys. Rev. B 12: 3297 (1975).
B. O. Kolbesen, Simultaneous determination of the total content of B and P in high resistivity Si by IR spectroscopy at low temperature, Appl. Phys. Lett. 27: 353 (1975).
R. Baron, M. H. Young, J. K. Neeland, and O. J. Marsh, Characterization of high resistivity Si by Hall measurements in “Semiconductor Silicon 1977”, H. R. Huff, and E. Sirtl, ed., The Electrochemical Society, p. 367 (1977).
D. K. Schroder, T. T. Braggins, and H. M. Hobgood, The doping concentrations of In-doped Si measured by Hall, C-V, and junction breakdown techniques, J. Appl. Phys. 49: 5256 (1978)
M. Tajima, Determination of B and P concentrations in Si by photoluminescence analysis, Appl. Phys. Lett. 32: 719 (1978).
B. Pajot, J. Kauppinen, and R. Anttila, High resolution study of the group V impurities absorption in Si, Solid State Commun. 31: 759 (1979).
C. Jagannath, Z. W. Grabowski, and A. K. Ramdas, A high resolution study of the excitation spectrum of the P donors introduced in Si by neutron transmutation, Solid State Commun. 29: 355 (1979).
M. Capizzi, G. A. Thomas, F. De Rosa, R. N. Bhatt, and T. M. Rice, Observation of donor exciton band in silicon, Solid State Commun. 31: 611 (1979).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1981 Plenum Press, New York
About this chapter
Cite this chapter
Pajot, B., Débarre, D. (1981). Quantitative Determination of B and P in Silicon by IR Spectroscopy. In: Guldberg, J. (eds) Neutron-Transmutation-Doped Silicon. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-3261-9_29
Download citation
DOI: https://doi.org/10.1007/978-1-4613-3261-9_29
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-3263-3
Online ISBN: 978-1-4613-3261-9
eBook Packages: Springer Book Archive