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Quantitative Determination of B and P in Silicon by IR Spectroscopy

  • Bernard Pajot
  • Dominique Débarre

Abstract

Many of the applications of silicon share the need for a high-purity homogeneous material with a controlled concentration of residual shallow and deep impurities. One of its utilization is the fabrication of coupled charge devices (CCD) linked to extrinsic Si detectors arrays. This has given a new impetus to the study of impurities and defects in this material as well as to the need for accurate compensation techniques since spurious effects arise from the presence of uncompensated and unwanted impurities, even at low concentration. Besides atomic impurities, electrical, optical and photoconductive studies have shown the existence in the band gap of silicon of shallow acceptor levels due to impurity complexes whose nature is not yet wholly elucidated1–3.

Keywords

Impurity Line Deep Impurity Compensation Ratio Neutral Impurity High Resolution Study 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • Bernard Pajot
    • 1
  • Dominique Débarre
    • 1
  1. 1.Groupe de Physique des Solides de l’E.N.S.Université Paris 7Paris Cedex 05France

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