Quantitative Determination of B and P in Silicon by IR Spectroscopy

  • Bernard Pajot
  • Dominique Débarre


Many of the applications of silicon share the need for a high-purity homogeneous material with a controlled concentration of residual shallow and deep impurities. One of its utilization is the fabrication of coupled charge devices (CCD) linked to extrinsic Si detectors arrays. This has given a new impetus to the study of impurities and defects in this material as well as to the need for accurate compensation techniques since spurious effects arise from the presence of uncompensated and unwanted impurities, even at low concentration. Besides atomic impurities, electrical, optical and photoconductive studies have shown the existence in the band gap of silicon of shallow acceptor levels due to impurity complexes whose nature is not yet wholly elucidated1–3.


Impurity Line Deep Impurity Compensation Ratio Neutral Impurity High Resolution Study 
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  1. 1.
    R. N. Thomas, T. T. Braggins, H. M. Hobgood, and W. J. Takei, Compensation of residual impurities in extrinsic In-doped Si by neutron transmutation of Si, J. Appl. Phys. 49: 2811 (1978).CrossRefGoogle Scholar
  2. 2.
    M. H. Young, O. J. Marsh, and R. Baron, Shallow defect levels in neutron irradiated p-type extrinsic Si, J. Appl. Phys. 50 3755 (1979).CrossRefGoogle Scholar
  3. 3.
    W. Scott, and C. E. Jones, IR spectra of new acceptor levels in B- and Ga-doped Si, J. Appl. Phys. 50: 7258 (1979).CrossRefGoogle Scholar
  4. 4.
    F. Merlet, B. Pajot, Ph. Areas, and A.M. Jean-Louis, Experimental study of the Zeeman splitting of B-levels in Si, Phys. Rev. B 12: 3297 (1975).CrossRefGoogle Scholar
  5. 5.
    B. O. Kolbesen, Simultaneous determination of the total content of B and P in high resistivity Si by IR spectroscopy at low temperature, Appl. Phys. Lett. 27: 353 (1975).CrossRefGoogle Scholar
  6. 6.
    R. Baron, M. H. Young, J. K. Neeland, and O. J. Marsh, Characterization of high resistivity Si by Hall measurements in “Semiconductor Silicon 1977”, H. R. Huff, and E. Sirtl, ed., The Electrochemical Society, p. 367 (1977).Google Scholar
  7. 7.
    D. K. Schroder, T. T. Braggins, and H. M. Hobgood, The doping concentrations of In-doped Si measured by Hall, C-V, and junction breakdown techniques, J. Appl. Phys. 49: 5256 (1978)CrossRefGoogle Scholar
  8. 8.
    M. Tajima, Determination of B and P concentrations in Si by photoluminescence analysis, Appl. Phys. Lett. 32: 719 (1978).CrossRefGoogle Scholar
  9. 9.
    B. Pajot, J. Kauppinen, and R. Anttila, High resolution study of the group V impurities absorption in Si, Solid State Commun. 31: 759 (1979).CrossRefGoogle Scholar
  10. 10.
    C. Jagannath, Z. W. Grabowski, and A. K. Ramdas, A high resolution study of the excitation spectrum of the P donors introduced in Si by neutron transmutation, Solid State Commun. 29: 355 (1979).CrossRefGoogle Scholar
  11. 11.
    M. Capizzi, G. A. Thomas, F. De Rosa, R. N. Bhatt, and T. M. Rice, Observation of donor exciton band in silicon, Solid State Commun. 31: 611 (1979).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • Bernard Pajot
    • 1
  • Dominique Débarre
    • 1
  1. 1.Groupe de Physique des Solides de l’E.N.S.Université Paris 7Paris Cedex 05France

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